Моделирование транзисторов с высокой подвижностью электронов

• Date: 2003
• Main Author: Emtsev, P. A.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2003
• Subjects: транзистор с высокой подвижностью электронов; моделирование транзисторов; САПР; СВЧ
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.20
• Journal Title: Technology and design in electronic equipment

The paper considers issues of modeling high electron mobility transistors (HEMT). The requirements for HEMT models are outlined. The most common types of models are described: small-signal, noise, nonlinear, and distributed. An algorithm for extracting parameters of the small-signal model is present...