СВЧ полевые транзисторы средней мощности миллиметрового диапазона длин волн

• Date: 2003
• Main Authors: Ivashchuk, A. V., Bosy, V. I., Kovalchuk, V. N.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2003
• Subjects: СВЧ полевые транзисторы; средняя мощность; миллиметровый диапазон; GaAs; коэффициент шума
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.27
• Journal Title: Technology and design in electronic equipment

The paper presents the results of optimization of the design and fabrication technology of microwave field-effect transistors of medium power with an operating frequency in the range of 18–36 GHz on GaAs epitaxial structures. The output power of the transistors is about 100 mW at 1 dB compression, t...