Cover Image

Солнечные элементы на основе тандемных гетероструктур GaAs–InGaAs–AlGaAs

The paper reports on the fabrication and investigation of tandem solar cells based on GaAs–InGaAs–AlGaAs with an active area of 0.93 cm². A tunnel junction is used to connect the upper (AlGaAs) and lower (InGaAs) cells of the tandem solar element. Under spectral conditions AM 1.5 (1 sun), the measur...

Full description

Saved in:
Bibliographic Details
Date:2003
Main Authors: Krukovsky, S. I., Nikolaenko, Yu. E.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2003
Subjects:
фотопреобразователи
многослойные тандемные гетероструктуры
низкотемпературная ЖФЭ
коэффициент полезного действия
легирование
p–n-переход
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.39
Tags: Add Tag
No Tags, Be the first to tag this record!
Journal Title:Technology and design in electronic equipment

Institution

Technology and design in electronic equipment
Description
Summary:The paper reports on the fabrication and investigation of tandem solar cells based on GaAs–InGaAs–AlGaAs with an active area of 0.93 cm². A tunnel junction is used to connect the upper (AlGaAs) and lower (InGaAs) cells of the tandem solar element. Under spectral conditions AM 1.5 (1 sun), the measured short-circuit current density and open-circuit voltage reached 14.2–15.1 mA/cm² and 2.35–2.43 V, respectively, while the efficiency was 26.4–30.1%.

Similar Items