Солнечные элементы на основе тандемных гетероструктур GaAs–InGaAs–AlGaAs
The paper reports on the fabrication and investigation of tandem solar cells based on GaAs–InGaAs–AlGaAs with an active area of 0.93 cm². A tunnel junction is used to connect the upper (AlGaAs) and lower (InGaAs) cells of the tandem solar element. Under spectral conditions AM 1.5 (1 sun), the measur...
Gespeichert in:
| Datum: | 2003 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2003
|
| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.39 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Technology and design in electronic equipment |