Влияние кремниевой подложки на пробивное напряжение разветвленного n++–p+-перехода

The paper examines the influence of microdefects, as well as oxygen and carbon impurities in the silicon substrate, on the breakdown voltage of an uncontrolled n++–p+ junction. The mechanism of oxygen impurity impact on the type of breakdown is briefly discussed. Practical applications of the result...

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Bibliographic Details
Date:2003
Main Authors: Sidorenko, V. P., Kizyak, A. Yu., Nikolaenko, Yu. E.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2003
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Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.56
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment

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