Влияние кремниевой подложки на пробивное напряжение разветвленного n++–p+-перехода
The paper examines the influence of microdefects, as well as oxygen and carbon impurities in the silicon substrate, on the breakdown voltage of an uncontrolled n++–p+ junction. The mechanism of oxygen impurity impact on the type of breakdown is briefly discussed. Practical applications of the result...
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| Date: | 2003 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2003
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.56 |
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| Journal Title: | Technology and design in electronic equipment |