Новое поколение фотоприемников ультрафиолетового излучения

• Date: 2003
• Author Affiliations: K. V. Kolezhuk — V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine; V. N. Komashchenko — V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine; G. I. Sheremetova — V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine; F. I. Korzhinsky — V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine; V. M. Chmil — SPE «Saturn», Kyiv, Ukraine
• Keywords: keywords
• Main Authors: Kolezhuk, K. V., Komashchenko, V. N., Sheremetova, G. I., Korzhinsky, F. I., Chmil, V. M.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2003
• Subjects: фотоприемники ультрафиолетового излучения; широкозонные полупроводники А2В6; слоистые гетероструктуры; спектральная характеристика; мониторинг УФ-излучения
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.3.51
• Journal Title: Technology and design in electronic equipment

An experimental batch of selective and broadband ultraviolet radiation sensors of a new generation has been developed and manufactured, based on layered heterostructures in the A2B6 wide-band semiconductor system and their solid solutions. The created sensors have no industrial analogues worldwide. Their main distinguishing feature is insensitivity to visible light without the need for special optical filters to correct the spectral response. They are intended for ultraviolet radiation monitoring.