Мощные СВЧ-транзисторы на основе широкозонных полупроводников

• Datum: 2003
• Hauptverfasser: Bosyi, V. I., Ivashchuk, A. V., Kovalchuk, V. N., Semashko, E. M.
• Format: Artikel
• Sprache: Ukrainisch
• Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2003
• Schlagworte: мощные СВЧ‑транзисторы; гетероструктуры AlGaN/GaN; HEMT; надежность приборов
• Online Zugang: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.3.53
• Назва журналу: Technology and design in electronic equipment

A review of recent published results on the development of high-power microwave transistors based on AlGaN/GaN heterostructures is presented. The design and manufacturing technology of these transistors are discussed, along with studies of substrate influence on device characteristics. It is shown t...