Мощные СВЧ-транзисторы на основе широкозонных полупроводников
A review of recent published results on the development of high-power microwave transistors based on AlGaN/GaN heterostructures is presented. The design and manufacturing technology of these transistors are discussed, along with studies of substrate influence on device characteristics. It is shown t...
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| Date: | 2003 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2003
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.3.53 |
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| Journal Title: | Technology and design in electronic equipment |
| Download file: |  |