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Новое поколение микроэлектронных кремниевых термодатчиков

Silicon diode temperature sensors of a new generation are presented. The developed sensors are characterized by high measurement accuracy over a wide temperature range, high interchangeability, low power consumption, small mass, and the ability to operate effectively under combined exposure to low a...

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Bibliographische Detailangaben
Datum:2003
Hauptverfasser: Shvarts, Yu. M., Shvarts, M. M., Ivashchenko, A. N., Bosyi, V. I., Maksimenko, A. G., Sapon, S. V.
Format: Artikel
Sprache:Ukrainisch
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2003
Schlagworte:
кремниевые диодные термодатчики
стойкость к механическим ударам и вибрациям
стойкость к климатическим и радиационным воздействиям
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.3.59
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Назва журналу:Technology and design in electronic equipment
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Technology and design in electronic equipment
Beschreibung
Zusammenfassung:Silicon diode temperature sensors of a new generation are presented. The developed sensors are characterized by high measurement accuracy over a wide temperature range, high interchangeability, low power consumption, small mass, and the ability to operate effectively under combined exposure to low and high temperatures, thermal cycles, mechanical shocks and vibrations, climatic factors, high radiation, and more.

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