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Новое поколение микроэлектронных кремниевых термодатчиков

Silicon diode temperature sensors of a new generation are presented. The developed sensors are characterized by high measurement accuracy over a wide temperature range, high interchangeability, low power consumption, small mass, and the ability to operate effectively under combined exposure to low a...

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Bibliographic Details
Date:2003
Main Authors: Shvarts, Yu. M., Shvarts, M. M., Ivashchenko, A. N., Bosyi, V. I., Maksimenko, A. G., Sapon, S. V.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2003
Subjects:
кремниевые диодные термодатчики
стойкость к механическим ударам и вибрациям
стойкость к климатическим и радиационным воздействиям
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.3.59
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Journal Title:Technology and design in electronic equipment
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Technology and design in electronic equipment
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Summary:Silicon diode temperature sensors of a new generation are presented. The developed sensors are characterized by high measurement accuracy over a wide temperature range, high interchangeability, low power consumption, small mass, and the ability to operate effectively under combined exposure to low and high temperatures, thermal cycles, mechanical shocks and vibrations, climatic factors, high radiation, and more.

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