Новое поколение микроэлектронных кремниевых термодатчиков
Silicon diode temperature sensors of a new generation are presented. The developed sensors are characterized by high measurement accuracy over a wide temperature range, high interchangeability, low power consumption, small mass, and the ability to operate effectively under combined exposure to low a...
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| Date: | 2003 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2003
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.3.59 |
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| Journal Title: | Technology and design in electronic equipment |
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