Расчет тонкопленочных транзисторов с затвором Шоттки на основе аморфного полупроводника

• Date: 2003
• Main Author: Mamedov, A. K.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2003
• Subjects: тонкопленочный транзистор; затвор Шоттки; аморфный полупроводник; математическая модель; фталоцианин; устройства отображения
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.2.18
• Journal Title: Technology and design in electronic equipment

A mathematical model of a thin‑film transistor with a Schottky gate based on amorphous semiconductor layers is proposed. Using the presented model, the main parameters and characteristics of a transistor based on an organic phthalocyanine film were calculated. The study highlights the prospects of u...