Расчет тонкопленочных транзисторов с затвором Шоттки на основе аморфного полупроводника
A mathematical model of a thin‑film transistor with a Schottky gate based on amorphous semiconductor layers is proposed. Using the presented model, the main parameters and characteristics of a transistor based on an organic phthalocyanine film were calculated. The study highlights the prospects of u...
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| Datum: | 2003 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2003
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.2.18 |
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| Назва журналу: | Technology and design in electronic equipment |
| Завантажити файл: |  |