Фотодиоды на основе моноселенидов индия и галлия
The paper analyzes the electrical and photoelectric properties of rectifying structures of various types (surface‑barrier diodes, p–n homojunctions, and heterojunctions) based on gallium and indium monoselenides. The influence of the parameters of the base materials on the main technical characteris...
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| Datum: | 2003 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2003
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.2.42 |
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| Назва журналу: | Technology and design in electronic equipment |
| Завантажити файл: |  |
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Technology and design in electronic equipment| Zusammenfassung: | The paper analyzes the electrical and photoelectric properties of rectifying structures of various types (surface‑barrier diodes, p–n homojunctions, and heterojunctions) based on gallium and indium monoselenides. The influence of the parameters of the base materials on the main technical characteristics and diode parameters is discussed, along with possible ways to improve them. |
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