Многослойные гетероструктуры на основе поликристаллических пленок соединений А2В6
The applicability of certain heterostructure concepts to polycrystalline objects based on lattice‑mismatched A2B6 compounds is demonstrated. The study highlights the prospects of such multilayer heterostructures for the development of photoelectric devices. The presence of potential barriers at the...
Збережено в:
| Дата: | 2003 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2003
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.2.49 |
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| Назва журналу: | Technology and design in electronic equipment |
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Репозитарії
Technology and design in electronic equipment| Резюме: | The applicability of certain heterostructure concepts to polycrystalline objects based on lattice‑mismatched A2B6 compounds is demonstrated. The study highlights the prospects of such multilayer heterostructures for the development of photoelectric devices. The presence of potential barriers at the interface of semiconductors with different bandgap widths makes it possible to minimize recombination losses and to design new types of efficient radiation sensors based on wide‑bandgap semiconductors grown on narrow‑bandgap substrates. |
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