Учет механических напряжений в комбинированных диэлектриках для конденсаторов СБИС
A variant of a combined capacitor dielectric based on tantalum pentoxide for VLSI capacitors is proposed. To find the optimal combination of layers in which the Si—SiO₂—Ta₂O₅ system does not undergo elastic mechanical deformation, a stress model was constructed. Calculations showed that when the thi...
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| Datum: | 2003 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2003
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.1.19 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | A variant of a combined capacitor dielectric based on tantalum pentoxide for VLSI capacitors is proposed. To find the optimal combination of layers in which the Si—SiO₂—Ta₂O₅ system does not undergo elastic mechanical deformation, a stress model was constructed. Calculations showed that when the thickness ratio of Ta₂O₅ and SiO₂ films is 1:10, the curvature radius of the plate with formed dielectrics tends to infinity, and the curvature itself approaches zero. Elastic constants for the Ta₂O₅ film were also calculated. |
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