Учет механических напряжений в комбинированных диэлектриках для конденсаторов СБИС

A variant of a combined capacitor dielectric based on tantalum pentoxide for VLSI capacitors is proposed. To find the optimal combination of layers in which the Si—SiO₂—Ta₂O₅ system does not undergo elastic mechanical deformation, a stress model was constructed. Calculations showed that when the thi...

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Datum:2003
Автори та афіліації:
  • V. A. Pilipenko — «Integral» Scientific Production Association, Minsk, Belarus
  • V. N. Ponomar — «Integral» Scientific Production Association, Minsk, Belarus
  • T. V. Petlitskaya — «Integral» Scientific Production Association, Minsk, Belarus
Ключові слова:keywords
Hauptverfasser: Pilipenko, V. A., Ponomar, V. N., Petlitskaya, T. V.
Format: Artikel
Sprache:Ukrainisch
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2003
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Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.1.19
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Назва журналу:Technology and design in electronic equipment
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Technology and design in electronic equipment

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