Численное моделирование лазерных фотоионизационных технологий очистки вещества на атомном уровне
For the first time, a methodology for numerical modeling of optimal schemes of laser photoionization technologies for material control and purification at the atomic level has been proposed and implemented (illustrated by the analysis of Al impurities in a Ge sample). The laser photoionization separ...
Gespeichert in:
| Datum: | 2003 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2003
|
| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.1.38 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Technology and design in electronic equipment |
| Завантажити файл: |  |
Institution
Technology and design in electronic equipment| Zusammenfassung: | For the first time, a methodology for numerical modeling of optimal schemes of laser photoionization technologies for material control and purification at the atomic level has been proposed and implemented (illustrated by the analysis of Al impurities in a Ge sample). The laser photoionization separation scheme includes, at the first stage, excitation of impurity atoms in the sample by resonant laser radiation; at the second stage, transfer of atoms into highly excited Rydberg states, followed by ionization with an electric field. The developed approach makes it possible to select both optimized values of key physical parameters of separation schemes and the most efficient scheme variant as a whole. |
|---|