Использование квантовых точек InSb в термофотовольтаических преобразователях на основе GaSb
The influence of radiation absorption in InSb quantum dots (QDs) on the efficiency of GaSb‑based thermophotovoltaic (TPV) elements has been investigated. It is shown that the introduction of QDs significantly expands the spectral range of photosensitivity and increases the efficiency of TPV elements...
Збережено в:
| Дата: | 2003 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2003
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.1.46 |
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| Назва журналу: | Technology and design in electronic equipment |
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Репозитарії
Technology and design in electronic equipment| Резюме: | The influence of radiation absorption in InSb quantum dots (QDs) on the efficiency of GaSb‑based thermophotovoltaic (TPV) elements has been investigated. It is shown that the introduction of QDs significantly expands the spectral range of photosensitivity and increases the efficiency of TPV elements. Analysis of optical transitions in InSb QDs, as well as the dependence of the thermodynamic efficiency of the TPV element on QD size, made it possible to determine the optimal conductivity type, doping level of the matrix material, and select the optimal QD diameter. |
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