Cover Image

Использование квантовых точек InSb в термофотовольтаических преобразователях на основе GaSb

The influence of radiation absorption in InSb quantum dots (QDs) on the efficiency of GaSb‑based thermophotovoltaic (TPV) elements has been investigated. It is shown that the introduction of QDs significantly expands the spectral range of photosensitivity and increases the efficiency of TPV elements...

Full description

Saved in:
Bibliographic Details
Date:2003
Main Authors: Andronova, E. V., Baganov, E. A., Dalechin, A. Yu., Karmanny, A. Yu.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2003
Subjects:
квантовые точки InSb
термофотовольтаические преобразователи
GaSb
спектральный диапазон
фоточувствительность
эффективность
оптические переходы
легирование
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.1.46
Tags: Add Tag
No Tags, Be the first to tag this record!
Journal Title:Technology and design in electronic equipment
Download file: Pdf

Institution

Technology and design in electronic equipment
Description
Summary:The influence of radiation absorption in InSb quantum dots (QDs) on the efficiency of GaSb‑based thermophotovoltaic (TPV) elements has been investigated. It is shown that the introduction of QDs significantly expands the spectral range of photosensitivity and increases the efficiency of TPV elements. Analysis of optical transitions in InSb QDs, as well as the dependence of the thermodynamic efficiency of the TPV element on QD size, made it possible to determine the optimal conductivity type, doping level of the matrix material, and select the optimal QD diameter.

Similar Items