Расчет частотной зависимости диэлектрических характеристик тонких пленок системы HfO₂—Nd₂O₃
A calculation methodology is proposed for films of the multicomponent HfO₂—Nd₂O₃ system obtained by electron‑beam evaporation in vacuum, with non‑uniform distribution of components across thickness. The calculated data show good correlation with experimental results, enabling the production of films...
Збережено в:
| Дата: | 2003 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2003
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.1.52 |
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| Назва журналу: | Technology and design in electronic equipment |
| Завантажити файл: |  |
Репозитарії
Technology and design in electronic equipment| Резюме: | A calculation methodology is proposed for films of the multicomponent HfO₂—Nd₂O₃ system obtained by electron‑beam evaporation in vacuum, with non‑uniform distribution of components across thickness. The calculated data show good correlation with experimental results, enabling the production of films with specified dielectric characteristics over a wide frequency range. The results were used to optimize parameters of thin‑film emitters with dielectric coatings of the HfO₂—Nd₂O₃ system. |
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