Комплексный подход к получению высокочистых материалов для микроэлектроники

• Published in: Технологія та конструювання в електронній апаратурі
• Date: 2002
• Issue: 6
• Pages: 3-6
• ISSN: 3083-6549
• Author Affiliations: V. M. Azhazha — National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine; G. P. Kovtun — National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine; I. M. Nekljudov — National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
• Main Authors: Azhazha, V. M., Kovtun, G. P., Nekljudov, I. M.
• Format: Article
• Language: Somali
• Published: PE "Politekhperiodika", Book and Journal Publishers 2002
• Subjects: высокочистые материалы; GaAs; геттерные материалы; очистка технологических газов
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2002.6.03
• Journal Title: Technology and design in electronic equipment

The paper presents the results of numerical simulation of the electrophysical properties of GaAs depending on the content of residual impurities, and describes physical refining methods for obtaining high-purity Ga, Zn, Cd, Te, Nb, Ta, Zr, and other metals. The results of research on the stability o...