Поліпшення зворотних характеристик діода Шотткі при використанні гетерування
The paper considers the causes and mechanisms of the influence of defects and impurities on the reverse current of the Schottky diode. The influence of two getter regions, which were created by different technologies on the working side and the reverse side of the plate, on the value of the reverse...
Збережено в:
| Дата: | 2019 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2019
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2019.1-2.34 |
| Теги: |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | The paper considers the causes and mechanisms of the influence of defects and impurities on the reverse current of the Schottky diode. The influence of two getter regions, which were created by different technologies on the working side and the reverse side of the plate, on the value of the reverse current of diodes was experimentally investigated, and the physical factors of such influence were analyzed. The proposed technology for creating getter regions allows one to significantly reduce the reverse current of diodes and increase the product yield. |
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