Поліпшення зворотних характеристик діода Шотткі при використанні гетерування

The paper considers the causes and mechanisms of the influence of defects and impurities on the reverse current of the Schottky diode. The influence of two getter regions, which were created by different technologies on the working side and the reverse side of the plate, on the value of the reverse...

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Bibliographic Details
Date:2019
Main Authors: Litvinenko, V., Vikulin, I., Gorbachev, V.
Format: Article
Language:English
Published: PE "Politekhperiodika", Book and Journal Publishers 2019
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Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2019.1-2.34
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment