Плазменная технология формирования субмикронных структур БИС

• Published in: Технологія та конструювання в електронній апаратурі
• Date: 2002
• Issue: 6
• Pages: 57-63
• ISSN: 3083-6549
• Author Affiliations: S. P. Novosiadlyi — Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine
• Main Author: Novosiadlyi, S. P.
• Format: Article
• Language: Welsh
• Published: PE "Politekhperiodika", Book and Journal Publishers 2002
• Subjects: плазменная технология; субмикронные структуры; БИС; осаждение и травление; гомоэпитаксия; дефектность
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2002.6.57
• Journal Title: Technology and design in electronic equipment

High-frequency plasma processes for the deposition and etching of functional layers during the formation of LSI structures with topological dimensions of 0.5–0.8 μm are investigated. The technology ensures minimal induced defect density of functional layers (<0.05 cm⁻²), does not affect t...