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Влияние γ-излучения на токоперенос в арсенидгаллиевом полевом транзисторе

Through modeling and experimental studies, it is shown that a multi-order increase in the channel current of a gallium arsenide field-effect transistor under the influence of γ-radiation is caused by the appearance of secondary currents in the substrate that are comparable to the currents in the fil...

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Bibliographic Details
Published in:Технологія та конструювання в електронній апаратурі
Date:2002
Issue:4–5
Pages:13-15
ISSN:3083-6549
Author Affiliations:
  • F. D. Kasimov — Special Design Bureau of Space Instrumentation, Baku, Azerbaijan
  • A. E. Liutfalibekova — Special Design Bureau of Space Instrumentation, Baku, Azerbaijan
Main Authors: Kasimov, F. D., Liutfalibekova, A. E.
Format: Article
Language:yo
Published: PE "Politekhperiodika", Book and Journal Publishers 2002
Subjects:
арсенид галлия
полевой транзистор
γ-излучение
токоперенос
вторичные токи подложки
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2002.4-5.13
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Journal Title:Technology and design in electronic equipment
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Technology and design in electronic equipment
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Summary:Through modeling and experimental studies, it is shown that a multi-order increase in the channel current of a gallium arsenide field-effect transistor under the influence of γ-radiation is caused by the appearance of secondary currents in the substrate that are comparable to the currents in the film.
ISSN:3083-6549

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