Дослідження ширини забороненої зони в змішаних кристалах ZnSxSe1–x
Scintillators based on ZnSxSe1–x are promising materials for X-ray and γ-ray detection. For optoelectronic devices, it is better to use semiconductor compounds with a direct-zone energy structure with its spectral range lying in the fundamental absorption region. The band gap in such semico...
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| Datum: | 2018 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2018
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2018.5-6.44 |
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| Назва журналу: | Technology and design in electronic equipment |