Электрические и фотоэлектрические свойства гетероструктур NiO/p-CdTe и NiO/n-CdTe
In this study, we investigate the electrical and photoelectric properties of heterostructures formed by the reactive magnetron sputtering of thin film NiO onto p-CdTe and n-CdTe substrates. The current-voltage characteristics of the heterojunctions were measured at room temperature. The dominating c...
Збережено в:
| Дата: | 2016 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | Ukrainian |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2016
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2016.4-5.29 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | In this study, we investigate the electrical and photoelectric properties of heterostructures formed by the reactive magnetron sputtering of thin film NiO onto p-CdTe and n-CdTe substrates. The current-voltage characteristics of the heterojunctions were measured at room temperature. The dominating current transport mechanisms through the NiO/n-CdTe and NiO/p-CdTe heterojunctions at the forward biases are generation-recombination and tunnel, at the reverse biases are tunnel current transport mechanisms. The heterojunctions under investigation generate open-circuit voltage Uoc = 0.26 V and short-circuit current Isc = 58.7 μA/cm2 under illumination 80 mW/cm-2.The research results can be used for better understanding of the processes occurring in heterojunctions NiO/ n-CdTe and NiO/p-CdTe, to further improve their properties and parameters. |
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