Коммутационные управляемые устройства на p–i–n-диодах миллиметрового диапазона длин волн
The paper presents the results of research and development of concentrated type p–i–n-diodes switches providing the switching time units of nanoseconds. To increase lock losses of (~40 dB) the authors use a cascade connection of diodes into waveguide and microstrip transmission line of θ = π/2 elect...
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PE "Politekhperiodika", Book and Journal Publishers
2016
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Technology and design in electronic equipment |
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2025-05-30T19:31:10Z |
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Ukrainian |
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выключатель СВЧ миллиметровый диапазон длин волн p–i–n-диод потери пропускания потери запирания время переключения |
| spellingShingle |
выключатель СВЧ миллиметровый диапазон длин волн p–i–n-диод потери пропускания потери запирания время переключения Karushkin, N. F. Malyshko, V. V. Orekhovsky, V. V. Tuharinov, A. A. Коммутационные управляемые устройства на p–i–n-диодах миллиметрового диапазона длин волн |
| topic_facet |
microwave switch millimeter wavelength range pin diode transmission loss locking loss switching time выключатель СВЧ миллиметровый диапазон длин волн p–i–n-диод потери пропускания потери запирания время переключения |
| format |
Article |
| author |
Karushkin, N. F. Malyshko, V. V. Orekhovsky, V. V. Tuharinov, A. A. |
| author_facet |
Karushkin, N. F. Malyshko, V. V. Orekhovsky, V. V. Tuharinov, A. A. |
| author_sort |
Karushkin, N. F. |
| title |
Коммутационные управляемые устройства на p–i–n-диодах миллиметрового диапазона длин волн |
| title_short |
Коммутационные управляемые устройства на p–i–n-диодах миллиметрового диапазона длин волн |
| title_full |
Коммутационные управляемые устройства на p–i–n-диодах миллиметрового диапазона длин волн |
| title_fullStr |
Коммутационные управляемые устройства на p–i–n-диодах миллиметрового диапазона длин волн |
| title_full_unstemmed |
Коммутационные управляемые устройства на p–i–n-диодах миллиметрового диапазона длин волн |
| title_sort |
коммутационные управляемые устройства на p–i–n-диодах миллиметрового диапазона длин волн |
| title_alt |
Millimeter wave p–i–n-diode switching controlled devices |
| description |
The paper presents the results of research and development of concentrated type p–i–n-diodes switches providing the switching time units of nanoseconds. To increase lock losses of (~40 dB) the authors use a cascade connection of diodes into waveguide and microstrip transmission line of θ = π/2 electric length. Investigation results of creation of switching devices using longitudinally and transversely-distributed p–i–n-structures in the shortwave part of the millimeter wavelength range (f = 300 GHz) are presented.When developing switching devices intended to control the level of microwave power in the millimeter wavelength range, a number of special features arise limiting the achievement of optimal parameters. The dimensions of the metal ceramic packaged p–i–n-diodes and the mounting elements of semiconductor structures become comparable with the wavelength. As a result, package cannot be considered in the calculations and in the design as the capacity of the concentrated type. In our case the diode package is considered in the form of radial line which is able to transform the input impedance of the transmission line to the terminals of the diode structures, and realize high-impedance state (parallel resonance) in the device circuit in the mode of microwave power transmission. Engineering calculations for the given parameters of the silicon mesostructures showed the possibility of creating high-speed devices for switching microwave power with good characteristics. For diode assembling industrial clockwork ruby jewels with high quality of surface finish, strength and appropriate dimensions are applied as dielectric bushings. Suffice it to say that in the frequency range of 150 GHz, we used the bushings with dimensions of external diameter D = 0.4 mm and a height of h = 0.15 mm.The switches created provide transient units of nanoseconds, isolation more than 40 dB at relative frequency bandwidth of 30-40%. Evaluating progress in the development of millimeter wavelength devices, it should be noted that at frequencies greater than 200 GHz, the application of the concentrated type diodes is problematic. In this range, it would seem to be promising to use bulk semiconductors. In this case, surface-oriented p–i–n-structures can be applied as unified elements of the control devices in the shortwave part of the millimeter range, as well as in quasi-optical transmission lines. |
| publisher |
PE "Politekhperiodika", Book and Journal Publishers |
| publishDate |
2016 |
| url |
https://www.tkea.com.ua/index.php/journal/article/view/TKEA2016.4-5.34 |
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| first_indexed |
2025-09-24T17:30:35Z |
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2025-09-24T17:30:35Z |
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oai:tkea.com.ua:article-2342025-05-30T19:31:10Z Millimeter wave p–i–n-diode switching controlled devices Коммутационные управляемые устройства на p–i–n-диодах миллиметрового диапазона длин волн Karushkin, N. F. Malyshko, V. V. Orekhovsky, V. V. Tuharinov, A. A. microwave switch millimeter wavelength range pin diode transmission loss locking loss switching time выключатель СВЧ миллиметровый диапазон длин волн p–i–n-диод потери пропускания потери запирания время переключения The paper presents the results of research and development of concentrated type p–i–n-diodes switches providing the switching time units of nanoseconds. To increase lock losses of (~40 dB) the authors use a cascade connection of diodes into waveguide and microstrip transmission line of θ = π/2 electric length. Investigation results of creation of switching devices using longitudinally and transversely-distributed p–i–n-structures in the shortwave part of the millimeter wavelength range (f = 300 GHz) are presented.When developing switching devices intended to control the level of microwave power in the millimeter wavelength range, a number of special features arise limiting the achievement of optimal parameters. The dimensions of the metal ceramic packaged p–i–n-diodes and the mounting elements of semiconductor structures become comparable with the wavelength. As a result, package cannot be considered in the calculations and in the design as the capacity of the concentrated type. In our case the diode package is considered in the form of radial line which is able to transform the input impedance of the transmission line to the terminals of the diode structures, and realize high-impedance state (parallel resonance) in the device circuit in the mode of microwave power transmission. Engineering calculations for the given parameters of the silicon mesostructures showed the possibility of creating high-speed devices for switching microwave power with good characteristics. For diode assembling industrial clockwork ruby jewels with high quality of surface finish, strength and appropriate dimensions are applied as dielectric bushings. Suffice it to say that in the frequency range of 150 GHz, we used the bushings with dimensions of external diameter D = 0.4 mm and a height of h = 0.15 mm.The switches created provide transient units of nanoseconds, isolation more than 40 dB at relative frequency bandwidth of 30-40%. Evaluating progress in the development of millimeter wavelength devices, it should be noted that at frequencies greater than 200 GHz, the application of the concentrated type diodes is problematic. In this range, it would seem to be promising to use bulk semiconductors. In this case, surface-oriented p–i–n-structures can be applied as unified elements of the control devices in the shortwave part of the millimeter range, as well as in quasi-optical transmission lines. Представлены результаты исследований и разработки выключателей и переключателей с использованием p–i–n-диодов сосредоточенного типа, обеспечивающих время переключения единицы наносекунд. С целью увеличения развязки в закрытом состоянии (потерь запирания) около 40 дБ в устройствах применено каскадное включение диодов в волноводную и микрополосковую линии передачи на электрической длине θ = π/2. Представлены результаты исследований по созданию коммутационных устройств коротковолновой части миллиметрового диапазона длин волн (f = 300 ГГц) с использованием продольно- и поперечно-распределенных p–i–n-структур. PE "Politekhperiodika", Book and Journal Publishers 2016-10-29 Article Article Peer-reviewed Article application/pdf https://www.tkea.com.ua/index.php/journal/article/view/TKEA2016.4-5.34 10.15222/TKEA2016.4-5.34 Technology and design in electronic equipment; No. 4–5 (2016): Tekhnologiya i konstruirovanie v elektronnoi apparature; 34-41 Технологія та конструювання в електронній апаратурі; № 4–5 (2016): Технология и конструирование в электронной аппаратуре; 34-41 3083-6549 3083-6530 uk https://www.tkea.com.ua/index.php/journal/article/view/TKEA2016.4-5.34/203 Copyright (c) 2016 N. F. Karushkin, V. V. Malyshko, V. V. Orekhovsky, A. A. Tuharinov http://creativecommons.org/licenses/by/4.0/ |