Радиационно стойкая фотоструктура на основе Cr/In2Hg3Te6 для диода Шоттки

Радиационно стойкая фотоструктура на основе Cr/In2Hg3Te6 для диода Шоттки

Ge, Si, InGaAs, GaInAsP photodiodes are used as optical radiation receivers and function in a spectral range of transparency of quartz fiberglass. For the optical systems operated in the increased radioactivity the photodetectors' application on In2Hg3Te6 crystal base characterized by a photose...

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Date:2016
Main Authors: Ashcheulov, A. A., Galochkin, A. V., Romanyuk, I. S., Dremluzhenko, S. G.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2016
Subjects:
фотодиод Шоттки
радиационная стойкость
In2Hg3Te6
Сr
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2016.2-3.03
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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spelling oai:tkea.com.ua:article-2392025-05-30T19:31:28Z Radiation-resistant photostructure for Schottky diode based on Cr/In2Hg3Te6 Радиационно стойкая фотоструктура на основе Cr/In2Hg3Te6 для диода Шоттки Ashcheulov, A. A. Galochkin, A. V. Romanyuk, I. S. Dremluzhenko, S. G. Schottky photodiode radiation resistance In2Hg3Te6 Cr фотодиод Шоттки радиационная стойкость In2Hg3Te6 Сr Ge, Si, InGaAs, GaInAsP photodiodes are used as optical radiation receivers and function in a spectral range of transparency of quartz fiberglass. For the optical systems operated in the increased radioactivity the photodetectors' application on In2Hg3Te6 crystal base characterized by a photosensitivity in the spectral range of 0,5–1,6 mm and also by increased radiation resistance to alpha, beta and gamma radiation is most acceptable.Schottky photodiode structure was designed on the base of this semiconductor formed by a modified floating zone recrystallization technique where the sedimentation effect was leveled. It consists of n-In2Hg3Te6 substrate and deposited by cathode sputtering Cr barrier layer of thickness within a range 10–11 nm choice of Cr is determined by its optimal optical, electric and adhesive features in high quality radiation-resistant photodiode structures manufacturing. Indium and nichrome are used as ohmic contacts.The barrier structures have the contact area of 1,13 mm2 with photo response of 0,6–1,6 mm at the maximal sensitivity 0,43 A/W on the wavelength l,55 mm. Reverse dark current of these structures do not exceed 4 mA at the bias of 1 V (T=295 K), and the potential barrier height is equal to 0,41 eV. The tests of radiation resistance of these structures demonstrated their ability to function at doses of 2⋅108 rem without evident parameters changes. This allows using them in practical aims in the conditions of high radiation. Представлены конструкция и технология изготовления структуры фотодиода Шоттки на основе подложки из радиационно стойкого кристалла n-In2Hg3Te6 с барьерным слоем из Cr, характеризуемого фотоответом в области 0,6—1,6 мкм при максимальной чувствительности 0,43 А/Вт на длине волны 1,55 мкм. Исследования электрических параметров этих фотодиодных структур показали, что высота потенциального барьера составляет 0,41 эВ, а величина обратного темнового тока не превышает 4 мкА. Созданные устройства сохраняют свою работоспособность при дозах гамма-облучения 2⋅108 бэр. PE "Politekhperiodika", Book and Journal Publishers 2016-06-29 Article Article Peer-reviewed Article application/pdf https://www.tkea.com.ua/index.php/journal/article/view/TKEA2016.2-3.03 10.15222/TKEA2016.2-3.03 Technology and design in electronic equipment; No. 2–3 (2016): Tekhnologiya i konstruirovanie v elektronnoi apparature; 3-7 Технологія та конструювання в електронній апаратурі; № 2–3 (2016): Технология и конструирование в электронной аппаратуре; 3-7 3083-6549 3083-6530 uk https://www.tkea.com.ua/index.php/journal/article/view/TKEA2016.2-3.03/208 Copyright (c) 2016 A. A. Ashcheulov, A. V. Galochkin, I. S. Romanyuk, S. G. Dremluzhenko http://creativecommons.org/licenses/by/4.0/
institution Technology and design in electronic equipment
baseUrl_str
datestamp_date 2025-05-30T19:31:28Z
collection OJS
language Ukrainian
topic фотодиод Шоттки
радиационная стойкость
In2Hg3Te6
Сr
spellingShingle фотодиод Шоттки
радиационная стойкость
In2Hg3Te6
Сr
Ashcheulov, A. A.
Galochkin, A. V.
Romanyuk, I. S.
Dremluzhenko, S. G.
Радиационно стойкая фотоструктура на основе Cr/In2Hg3Te6 для диода Шоттки
topic_facet Schottky photodiode
radiation resistance
In2Hg3Te6
Cr
фотодиод Шоттки
радиационная стойкость
In2Hg3Te6
Сr
format Article
author Ashcheulov, A. A.
Galochkin, A. V.
Romanyuk, I. S.
Dremluzhenko, S. G.
author_facet Ashcheulov, A. A.
Galochkin, A. V.
Romanyuk, I. S.
Dremluzhenko, S. G.
author_sort Ashcheulov, A. A.
title Радиационно стойкая фотоструктура на основе Cr/In2Hg3Te6 для диода Шоттки
title_short Радиационно стойкая фотоструктура на основе Cr/In2Hg3Te6 для диода Шоттки
title_full Радиационно стойкая фотоструктура на основе Cr/In2Hg3Te6 для диода Шоттки
title_fullStr Радиационно стойкая фотоструктура на основе Cr/In2Hg3Te6 для диода Шоттки
title_full_unstemmed Радиационно стойкая фотоструктура на основе Cr/In2Hg3Te6 для диода Шоттки
title_sort радиационно стойкая фотоструктура на основе cr/in2hg3te6 для диода шоттки
title_alt Radiation-resistant photostructure for Schottky diode based on Cr/In2Hg3Te6
description Ge, Si, InGaAs, GaInAsP photodiodes are used as optical radiation receivers and function in a spectral range of transparency of quartz fiberglass. For the optical systems operated in the increased radioactivity the photodetectors' application on In2Hg3Te6 crystal base characterized by a photosensitivity in the spectral range of 0,5–1,6 mm and also by increased radiation resistance to alpha, beta and gamma radiation is most acceptable.Schottky photodiode structure was designed on the base of this semiconductor formed by a modified floating zone recrystallization technique where the sedimentation effect was leveled. It consists of n-In2Hg3Te6 substrate and deposited by cathode sputtering Cr barrier layer of thickness within a range 10–11 nm choice of Cr is determined by its optimal optical, electric and adhesive features in high quality radiation-resistant photodiode structures manufacturing. Indium and nichrome are used as ohmic contacts.The barrier structures have the contact area of 1,13 mm2 with photo response of 0,6–1,6 mm at the maximal sensitivity 0,43 A/W on the wavelength l,55 mm. Reverse dark current of these structures do not exceed 4 mA at the bias of 1 V (T=295 K), and the potential barrier height is equal to 0,41 eV. The tests of radiation resistance of these structures demonstrated their ability to function at doses of 2⋅108 rem without evident parameters changes. This allows using them in practical aims in the conditions of high radiation.
publisher PE "Politekhperiodika", Book and Journal Publishers
publishDate 2016
url https://www.tkea.com.ua/index.php/journal/article/view/TKEA2016.2-3.03
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AT galochkinav radiationresistantphotostructureforschottkydiodebasedoncrin2hg3te6
AT romanyukis radiationresistantphotostructureforschottkydiodebasedoncrin2hg3te6
AT dremluzhenkosg radiationresistantphotostructureforschottkydiodebasedoncrin2hg3te6
AT ashcheulovaa radiacionnostojkaâfotostrukturanaosnovecrin2hg3te6dlâdiodašottki
AT galochkinav radiacionnostojkaâfotostrukturanaosnovecrin2hg3te6dlâdiodašottki
AT romanyukis radiacionnostojkaâfotostrukturanaosnovecrin2hg3te6dlâdiodašottki
AT dremluzhenkosg radiacionnostojkaâfotostrukturanaosnovecrin2hg3te6dlâdiodašottki
first_indexed 2025-09-24T17:30:35Z
last_indexed 2025-09-24T17:30:35Z
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