Радиационно стойкая фотоструктура на основе Cr/In2Hg3Te6 для диода Шоттки
Ge, Si, InGaAs, GaInAsP photodiodes are used as optical radiation receivers and function in a spectral range of transparency of quartz fiberglass. For the optical systems operated in the increased radioactivity the photodetectors' application on In2Hg3Te6 crystal base characterized by a photose...
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| Дата: | 2016 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Українська |
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PE "Politekhperiodika", Book and Journal Publishers
2016
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| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2016.2-3.03 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| _version_ | 1856543786858971136 |
|---|---|
| author | Ashcheulov, A. A. Galochkin, A. V. Romanyuk, I. S. Dremluzhenko, S. G. |
| author_facet | Ashcheulov, A. A. Galochkin, A. V. Romanyuk, I. S. Dremluzhenko, S. G. |
| author_sort | Ashcheulov, A. A. |
| baseUrl_str | |
| collection | OJS |
| datestamp_date | 2025-05-30T19:31:28Z |
| description | Ge, Si, InGaAs, GaInAsP photodiodes are used as optical radiation receivers and function in a spectral range of transparency of quartz fiberglass. For the optical systems operated in the increased radioactivity the photodetectors' application on In2Hg3Te6 crystal base characterized by a photosensitivity in the spectral range of 0,5–1,6 mm and also by increased radiation resistance to alpha, beta and gamma radiation is most acceptable.Schottky photodiode structure was designed on the base of this semiconductor formed by a modified floating zone recrystallization technique where the sedimentation effect was leveled. It consists of n-In2Hg3Te6 substrate and deposited by cathode sputtering Cr barrier layer of thickness within a range 10–11 nm choice of Cr is determined by its optimal optical, electric and adhesive features in high quality radiation-resistant photodiode structures manufacturing. Indium and nichrome are used as ohmic contacts.The barrier structures have the contact area of 1,13 mm2 with photo response of 0,6–1,6 mm at the maximal sensitivity 0,43 A/W on the wavelength l,55 mm. Reverse dark current of these structures do not exceed 4 mA at the bias of 1 V (T=295 K), and the potential barrier height is equal to 0,41 eV. The tests of radiation resistance of these structures demonstrated their ability to function at doses of 2⋅108 rem without evident parameters changes. This allows using them in practical aims in the conditions of high radiation. |
| first_indexed | 2025-09-24T17:30:35Z |
| format | Article |
| id | oai:tkea.com.ua:article-239 |
| institution | Technology and design in electronic equipment |
| language | Ukrainian |
| last_indexed | 2025-09-24T17:30:35Z |
| publishDate | 2016 |
| publisher | PE "Politekhperiodika", Book and Journal Publishers |
| record_format | ojs |
| spelling | oai:tkea.com.ua:article-2392025-05-30T19:31:28Z Radiation-resistant photostructure for Schottky diode based on Cr/In2Hg3Te6 Радиационно стойкая фотоструктура на основе Cr/In2Hg3Te6 для диода Шоттки Ashcheulov, A. A. Galochkin, A. V. Romanyuk, I. S. Dremluzhenko, S. G. Schottky photodiode radiation resistance In2Hg3Te6 Cr фотодиод Шоттки радиационная стойкость In2Hg3Te6 Сr Ge, Si, InGaAs, GaInAsP photodiodes are used as optical radiation receivers and function in a spectral range of transparency of quartz fiberglass. For the optical systems operated in the increased radioactivity the photodetectors' application on In2Hg3Te6 crystal base characterized by a photosensitivity in the spectral range of 0,5–1,6 mm and also by increased radiation resistance to alpha, beta and gamma radiation is most acceptable.Schottky photodiode structure was designed on the base of this semiconductor formed by a modified floating zone recrystallization technique where the sedimentation effect was leveled. It consists of n-In2Hg3Te6 substrate and deposited by cathode sputtering Cr barrier layer of thickness within a range 10–11 nm choice of Cr is determined by its optimal optical, electric and adhesive features in high quality radiation-resistant photodiode structures manufacturing. Indium and nichrome are used as ohmic contacts.The barrier structures have the contact area of 1,13 mm2 with photo response of 0,6–1,6 mm at the maximal sensitivity 0,43 A/W on the wavelength l,55 mm. Reverse dark current of these structures do not exceed 4 mA at the bias of 1 V (T=295 K), and the potential barrier height is equal to 0,41 eV. The tests of radiation resistance of these structures demonstrated their ability to function at doses of 2⋅108 rem without evident parameters changes. This allows using them in practical aims in the conditions of high radiation. Представлены конструкция и технология изготовления структуры фотодиода Шоттки на основе подложки из радиационно стойкого кристалла n-In2Hg3Te6 с барьерным слоем из Cr, характеризуемого фотоответом в области 0,6—1,6 мкм при максимальной чувствительности 0,43 А/Вт на длине волны 1,55 мкм. Исследования электрических параметров этих фотодиодных структур показали, что высота потенциального барьера составляет 0,41 эВ, а величина обратного темнового тока не превышает 4 мкА. Созданные устройства сохраняют свою работоспособность при дозах гамма-облучения 2⋅108 бэр. PE "Politekhperiodika", Book and Journal Publishers 2016-06-29 Article Article Peer-reviewed Article application/pdf https://www.tkea.com.ua/index.php/journal/article/view/TKEA2016.2-3.03 10.15222/TKEA2016.2-3.03 Technology and design in electronic equipment; No. 2–3 (2016): Tekhnologiya i konstruirovanie v elektronnoi apparature; 3-7 Технологія та конструювання в електронній апаратурі; № 2–3 (2016): Технология и конструирование в электронной аппаратуре; 3-7 3083-6549 3083-6530 uk https://www.tkea.com.ua/index.php/journal/article/view/TKEA2016.2-3.03/208 Copyright (c) 2016 A. A. Ashcheulov, A. V. Galochkin, I. S. Romanyuk, S. G. Dremluzhenko http://creativecommons.org/licenses/by/4.0/ |
| spellingShingle | фотодиод Шоттки радиационная стойкость In2Hg3Te6 Сr Ashcheulov, A. A. Galochkin, A. V. Romanyuk, I. S. Dremluzhenko, S. G. Радиационно стойкая фотоструктура на основе Cr/In2Hg3Te6 для диода Шоттки |
| title | Радиационно стойкая фотоструктура на основе Cr/In2Hg3Te6 для диода Шоттки |
| title_alt | Radiation-resistant photostructure for Schottky diode based on Cr/In2Hg3Te6 |
| title_full | Радиационно стойкая фотоструктура на основе Cr/In2Hg3Te6 для диода Шоттки |
| title_fullStr | Радиационно стойкая фотоструктура на основе Cr/In2Hg3Te6 для диода Шоттки |
| title_full_unstemmed | Радиационно стойкая фотоструктура на основе Cr/In2Hg3Te6 для диода Шоттки |
| title_short | Радиационно стойкая фотоструктура на основе Cr/In2Hg3Te6 для диода Шоттки |
| title_sort | радиационно стойкая фотоструктура на основе cr/in2hg3te6 для диода шоттки |
| topic | фотодиод Шоттки радиационная стойкость In2Hg3Te6 Сr |
| topic_facet | Schottky photodiode radiation resistance In2Hg3Te6 Cr фотодиод Шоттки радиационная стойкость In2Hg3Te6 Сr |
| url | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2016.2-3.03 |
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