Радиационно стойкая фотоструктура на основе Cr/In2Hg3Te6 для диода Шоттки

• Datum: 2016
• Hauptverfasser: Ashcheulov, A. A., Galochkin, A. V., Romanyuk, I. S., Dremluzhenko, S. G.
• Format: Artikel
• Sprache: Ukrainisch
• Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2016
• Schlagworte: фотодиод Шоттки; радиационная стойкость; In2Hg3Te6; Сr
• Online Zugang: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2016.2-3.03
• Назва журналу: Technology and design in electronic equipment

Ge, Si, InGaAs, GaInAsP photodiodes are used as optical radiation receivers and function in a spectral range of transparency of quartz fiberglass. For the optical systems operated in the increased radioactivity the photodetectors' application on In2Hg3Te6 crystal base characterized by a photose...