Формирование нанопленок Cu, Ag, Au под воздействием атомов водорода

Due to their electrical properties, thin metallic films are widely used in modern micro- and nanoelectronics. These properties allow solving fundamental problems of surface and solid state physics. Up-to-date methods of producing thin films involve high vacuum or multi-stage processes, which calls f...

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Дата:2015
Автори: Zhavzharov, E. L., Matyushin, V. M.
Формат: Стаття
Мова:Ukrainian
Опубліковано: PE "Politekhperiodika", Book and Journal Publishers 2015
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Онлайн доступ:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2015.5-6.41
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment
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spelling oai:tkea.com.ua:article-2632025-05-30T19:32:05Z Formation of Cu, Ag and Au nanofiims under the influence of hydrogen atoms Формирование нанопленок Cu, Ag, Au под воздействием атомов водорода Zhavzharov, E. L. Matyushin, V. M. nanofilms Ag Cu Au atomic hydrogen recombination spray нанопленки Ag, Cu, Au атомарный водород рекомбинация распыление Due to their electrical properties, thin metallic films are widely used in modern micro- and nanoelectronics. These properties allow solving fundamental problems of surface and solid state physics. Up-to-date methods of producing thin films involve high vacuum or multi-stage processes, which calls for complicated equipment.The authors propose an alternative method of producing thin metallic films using atomic hydrogen. Exothermal reaction of atoms recombination in a molecule (about 4.5 eV / recombination act) initiated on the solid surface by atomic hydrogen may stimulate local heating, spraying and surface atoms transfer.We investigated the process of atomic hydrogen treatment of Cu, Ag and Au metal films, obtained by thermal vacuum evaporation. There are two methods of obtaining nanofilms using atomic hydrogen treatment: sputtering and vapor-phase epitaxy. In the first method, a film is formed by reducing the thickness of the starting film. This method allows obtaining a film as thick as the monolayer. In the second method, a nanofilm is formed by deposition of metal atoms from the vapor phase. This method allows obtaining a film thickness from monolayer to 10 nm. These methods allow creating nanofilms with controlled parameters and metal thickness. Such films would be technologically pure and have good adhesion. Приведены результаты экспериментального исследования процесса получения металлических нанопленок Ag, Cu, Au в среде атомарного водорода. Предложено два метода, позволяющих контролируемо получать пленки металлов толщиной 1—20 нм при вакууме в камере порядка 20 Па. В основе этих методов лежит процесс распыления атомов поверхности твердого тела, возникающий под действием энергии рекомбинации атомарного водорода в молекулярный. PE "Politekhperiodika", Book and Journal Publishers 2015-12-25 Article Article Peer-reviewed Article application/pdf https://www.tkea.com.ua/index.php/journal/article/view/TKEA2015.5-6.41 10.15222/TKEA2015.5-6.41 Technology and design in electronic equipment; No. 5–6 (2015): Tekhnologiya i konstruirovanie v elektronnoi apparature; 41-44 Технологія та конструювання в електронній апаратурі; № 5–6 (2015): Технология и конструирование в электронной аппаратуре; 41-44 3083-6549 3083-6530 uk https://www.tkea.com.ua/index.php/journal/article/view/TKEA2015.5-6.41/231 Copyright (c) 2015 Zhavzharov E. L., Matyushin V. M. http://creativecommons.org/licenses/by/4.0/
institution Technology and design in electronic equipment
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datestamp_date 2025-05-30T19:32:05Z
collection OJS
language Ukrainian
topic нанопленки Ag
Cu
Au
атомарный водород
рекомбинация
распыление
spellingShingle нанопленки Ag
Cu
Au
атомарный водород
рекомбинация
распыление
Zhavzharov, E. L.
Matyushin, V. M.
Формирование нанопленок Cu, Ag, Au под воздействием атомов водорода
topic_facet nanofilms
Ag
Cu
Au
atomic hydrogen recombination spray
нанопленки Ag
Cu
Au
атомарный водород
рекомбинация
распыление
format Article
author Zhavzharov, E. L.
Matyushin, V. M.
author_facet Zhavzharov, E. L.
Matyushin, V. M.
author_sort Zhavzharov, E. L.
title Формирование нанопленок Cu, Ag, Au под воздействием атомов водорода
title_short Формирование нанопленок Cu, Ag, Au под воздействием атомов водорода
title_full Формирование нанопленок Cu, Ag, Au под воздействием атомов водорода
title_fullStr Формирование нанопленок Cu, Ag, Au под воздействием атомов водорода
title_full_unstemmed Формирование нанопленок Cu, Ag, Au под воздействием атомов водорода
title_sort формирование нанопленок cu, ag, au под воздействием атомов водорода
title_alt Formation of Cu, Ag and Au nanofiims under the influence of hydrogen atoms
description Due to their electrical properties, thin metallic films are widely used in modern micro- and nanoelectronics. These properties allow solving fundamental problems of surface and solid state physics. Up-to-date methods of producing thin films involve high vacuum or multi-stage processes, which calls for complicated equipment.The authors propose an alternative method of producing thin metallic films using atomic hydrogen. Exothermal reaction of atoms recombination in a molecule (about 4.5 eV / recombination act) initiated on the solid surface by atomic hydrogen may stimulate local heating, spraying and surface atoms transfer.We investigated the process of atomic hydrogen treatment of Cu, Ag and Au metal films, obtained by thermal vacuum evaporation. There are two methods of obtaining nanofilms using atomic hydrogen treatment: sputtering and vapor-phase epitaxy. In the first method, a film is formed by reducing the thickness of the starting film. This method allows obtaining a film as thick as the monolayer. In the second method, a nanofilm is formed by deposition of metal atoms from the vapor phase. This method allows obtaining a film thickness from monolayer to 10 nm. These methods allow creating nanofilms with controlled parameters and metal thickness. Such films would be technologically pure and have good adhesion.
publisher PE "Politekhperiodika", Book and Journal Publishers
publishDate 2015
url https://www.tkea.com.ua/index.php/journal/article/view/TKEA2015.5-6.41
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first_indexed 2025-09-24T17:30:38Z
last_indexed 2025-09-24T17:30:38Z
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