Исследование кристаллов Cu2ZnSnTe4 и гетеропереходов на их основе

Исследование кристаллов Cu2ZnSnTe4 и гетеропереходов на их основе

The paper reports on the results of the studies of magnetic, kinetic and optical properties of Cu2ZnSnTe4 crystals. The Cu2ZnSnTe4 crystals showed diamagnetic properties (the magnetic susceptibility almost independent of the magnetic field and temperature). The Cu2ZnSnTe4 ...

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Date:2015
Main Authors: Kovaliuk, T. T., Solovan, M. N., Mostovyi, A. I., Maistruk, E. V., Parkhomenko, G. P., Maryanchuk, P. D.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2015
Subjects:
кристалл
магнитная восприимчивость
гетеропереход
тонкая пленка
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2015.5-6.45
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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spelling oai:tkea.com.ua:article-2642025-05-30T19:32:05Z Research on Cu2ZnSnTe4 crystals and heterojunctions based on such crystals Исследование кристаллов Cu2ZnSnTe4 и гетеропереходов на их основе Kovaliuk, T. T. Solovan, M. N. Mostovyi, A. I. Maistruk, E. V. Parkhomenko, G. P. Maryanchuk, P. D. crystal magnetic susceptibility heterojunctions thin film кристалл магнитная восприимчивость гетеропереход тонкая пленка The paper reports on the results of the studies of magnetic, kinetic and optical properties of Cu2ZnSnTe4 crystals. The Cu2ZnSnTe4 crystals showed diamagnetic properties (the magnetic susceptibility almost independent of the magnetic field and temperature). The Cu2ZnSnTe4 crystals possessed p-type of conductivity and the Hall coefficient was independent on temperature. The temperature dependence of the electrical conductivity of the Cu2ZnSnTe4 crystal shows metallic character, i.e. decreases with the increase of temperature, that is caused by the lower charge carrier mobility at higher temperature. Thermoelectric power of the samples is positive that also indicates on the prevalence of p-type conductivity. Heterojunctions n-TiN/p-Cu2ZnSnTe4, n-TiO2/p-Cu2ZnSnTe4 and n-MoO/p-Cu2ZnSnTe4 were fabricated by the reactive magnetron sputtering of TiN, TiO2 and MoOx thin films, respectively, onto the substrates made of the Cu2ZnSnTe4 crystals. The dominating current transport mechanisms in the n-TiN/p-Cu2ZnSnTe4 and n-TiO2/p-Cu2ZnSnTe4 heterojunctions were established to be the tunnel-recombination mechanism at forward bias and tunnelling at reverse bias. Представлены результаты исследований магнитных, кинетических и оптических свойств кристаллов Cu2ZnSnTe4. Методом магнетронного осаждения тонких пленок TiN, TiO2 и МоОх на подложки из кристаллов Cu2ZnSnTe4 изготовлены анизотипные гетеропереходы n-TiN/p-Cu2ZnSnTe4, n-TiO2/p-Cu2ZnSnTe4 и n-MoO/p-Cu2ZnSnTe4. Исследованы их электрические свойства и установлены доминирующие механизмы токопереноса при прямом и обратном смещениях. PE "Politekhperiodika", Book and Journal Publishers 2015-12-25 Article Article Peer-reviewed Article application/pdf https://www.tkea.com.ua/index.php/journal/article/view/TKEA2015.5-6.45 10.15222/TKEA2015.5-6.45 Technology and design in electronic equipment; No. 5–6 (2015): Tekhnologiya i konstruirovanie v elektronnoi apparature; 45-49 Технологія та конструювання в електронній апаратурі; № 5–6 (2015): Технология и конструирование в электронной аппаратуре; 45-49 3083-6549 3083-6530 uk https://www.tkea.com.ua/index.php/journal/article/view/TKEA2015.5-6.45/232 Copyright (c) 2015 Kovaliuk T. T., Solovan M. N., Mostovyi A. I., Maistruk E. V., Parkhomenko G. P., Maryanchuk P. D. http://creativecommons.org/licenses/by/4.0/
institution Technology and design in electronic equipment
baseUrl_str
datestamp_date 2025-05-30T19:32:05Z
collection OJS
language Ukrainian
topic кристалл
магнитная восприимчивость
гетеропереход
тонкая пленка
spellingShingle кристалл
магнитная восприимчивость
гетеропереход
тонкая пленка
Kovaliuk, T. T.
Solovan, M. N.
Mostovyi, A. I.
Maistruk, E. V.
Parkhomenko, G. P.
Maryanchuk, P. D.
Исследование кристаллов Cu2ZnSnTe4 и гетеропереходов на их основе
topic_facet crystal
magnetic susceptibility
heterojunctions
thin film
кристалл
магнитная восприимчивость
гетеропереход
тонкая пленка
format Article
author Kovaliuk, T. T.
Solovan, M. N.
Mostovyi, A. I.
Maistruk, E. V.
Parkhomenko, G. P.
Maryanchuk, P. D.
author_facet Kovaliuk, T. T.
Solovan, M. N.
Mostovyi, A. I.
Maistruk, E. V.
Parkhomenko, G. P.
Maryanchuk, P. D.
author_sort Kovaliuk, T. T.
title Исследование кристаллов Cu2ZnSnTe4 и гетеропереходов на их основе
title_short Исследование кристаллов Cu2ZnSnTe4 и гетеропереходов на их основе
title_full Исследование кристаллов Cu2ZnSnTe4 и гетеропереходов на их основе
title_fullStr Исследование кристаллов Cu2ZnSnTe4 и гетеропереходов на их основе
title_full_unstemmed Исследование кристаллов Cu2ZnSnTe4 и гетеропереходов на их основе
title_sort исследование кристаллов cu2znsnte4 и гетеропереходов на их основе
title_alt Research on Cu2ZnSnTe4 crystals and heterojunctions based on such crystals
description The paper reports on the results of the studies of magnetic, kinetic and optical properties of Cu2ZnSnTe4 crystals. The Cu2ZnSnTe4 crystals showed diamagnetic properties (the magnetic susceptibility almost independent of the magnetic field and temperature). The Cu2ZnSnTe4 crystals possessed p-type of conductivity and the Hall coefficient was independent on temperature. The temperature dependence of the electrical conductivity of the Cu2ZnSnTe4 crystal shows metallic character, i.e. decreases with the increase of temperature, that is caused by the lower charge carrier mobility at higher temperature. Thermoelectric power of the samples is positive that also indicates on the prevalence of p-type conductivity. Heterojunctions n-TiN/p-Cu2ZnSnTe4, n-TiO2/p-Cu2ZnSnTe4 and n-MoO/p-Cu2ZnSnTe4 were fabricated by the reactive magnetron sputtering of TiN, TiO2 and MoOx thin films, respectively, onto the substrates made of the Cu2ZnSnTe4 crystals. The dominating current transport mechanisms in the n-TiN/p-Cu2ZnSnTe4 and n-TiO2/p-Cu2ZnSnTe4 heterojunctions were established to be the tunnel-recombination mechanism at forward bias and tunnelling at reverse bias.
publisher PE "Politekhperiodika", Book and Journal Publishers
publishDate 2015
url https://www.tkea.com.ua/index.php/journal/article/view/TKEA2015.5-6.45
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first_indexed 2025-09-24T17:30:38Z
last_indexed 2025-09-24T17:30:38Z
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