Элементы твердотельной электроники на основе КНИ-структур и нитевидных кристаллов Si для криогенных температур

• Date: 2014
• Main Authors: Druzhinin, A. A., Osrovskkii, I. P., Khoverko, Yu. M., Koretskyy, R. N.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2014
• Subjects: поликремний; нитевидный кристалл; КНИ-структура; диаграмма Найквиста
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.5-6.46
• Journal Title: Technology and design in electronic equipment

The paper presents the study results of electrical properties of polycrystalline silicon films in silicon-on-insulator structures and Si whiskers in the temperature range of 4.2 – 70 K obtained by impedance measurements in the frequency range from 10 Hz to 250 kHz and the possibility of their use in...