Особенности трансформации примесно-дефектных комплексов в CdTe:Cl под воздействием СВЧ-облучения

Особенности трансформации примесно-дефектных комплексов в CdTe:Cl под воздействием СВЧ-облучения

High-resistance cadmium telluride single crystals are promising material for production of ionizing radiation detectors. To increase crystal resistance, they are doped with chlorine. The detector quality depends on uniformity of chlorine impurity distribution over the crystal.It is known that low-do...

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Бібліографічні деталі
Дата:2014
Автори: Budzulyak, S. I., Korbutyak, D. V., Lots'ko, A. P., Vakhnyak, N. D., Kalitchuk, S. M., Demchina, L. A., Konakova, R. V., Shinkarenko, V. V., Mel'nichuk, A. V.
Формат: Стаття
Мова:Ukrainian
Опубліковано: PE "Politekhperiodika", Book and Journal Publishers 2014
Теми:
теллурид кадмия
фотолюминесценция
микроволновое излучение
Онлайн доступ:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.4.45
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment
id oai:tkea.com.ua:article-314
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spelling oai:tkea.com.ua:article-3142025-05-30T19:33:46Z Features of transformation of impurity-defect complexes in СdTe:Сl under the influence of microwave radiation Особенности трансформации примесно-дефектных комплексов в CdTe:Cl под воздействием СВЧ-облучения Budzulyak, S. I. Korbutyak, D. V. Lots'ko, A. P. Vakhnyak, N. D. Kalitchuk, S. M. Demchina, L. A. Konakova, R. V. Shinkarenko, V. V. Mel'nichuk, A. V. cadmium telluride photoluminescence microwave radiation теллурид кадмия фотолюминесценция микроволновое излучение High-resistance cadmium telluride single crystals are promising material for production of ionizing radiation detectors. To increase crystal resistance, they are doped with chlorine. The detector quality depends on uniformity of chlorine impurity distribution over the crystal.It is known that low-dose microwave irradiation can homogenize impurity distribution in a specimen. In the present work, we made an attempt to improve the detector material quality by using such post-technological treatment, as well as to study state variation for impurity-defect complexes. To this end, the effect of microwave irradiation on transformation of impurity-defect complexes in CdTe:Cl single crystals was investigated using low-temperature photoluminescence. It is shown that activation of ClTe donor centers by microwave irradiation for 10 s and presence of VCd acceptor centers in the specimens under investigation effectively facilitate formation of (VNd–ClTe) defect centers at which excitons are bound.Detailed investigations of the band form for donor-acceptor pairs (DAPs) in CdTe:Cl single crystals made it possible to determine the Huang — Rhys factor (that characterizes electron-phonon interaction in CdTe:Cl DAPs) as a function of microwave treatment duration. It is shown for single crystals with NCl = 5·1017 cm–3 and 5·1019 cm–3 that the Huang — Rhys factor grows with microwave irradiation dose. This is related to both homogenization of donor and acceptor centres distribution and increase of donor—acceptor spacing. It is shown that microwave irradiation of CdTe:Cl single crystals results in concentration reduction for separate cadmium vacancies VCd because of formation of (VNd–ClTe) defect centres at which excitons are bound. Методом низкотемпературной фотолюминесценции исследовано влияние микроволнового из­лу­че­ния на трансформацию примесно-дефектных комплексов в монокристаллах CdTe:Cl. По­ка­за­но, что активированные микроволновым облучением продолжительностью 10 с донорные центры СlTe и акцепторные цен­т­ры VCd, имеющиеся в образцах, создают эффективные ус­ло­вия для формирования дефектных центров (VСd–СlTe), на которых связываются экситоны. Де­та­ль­ные исследования формы полосы фотолюминесценции донорно-акцепторных пар мо­но­крис­та­л­лов СdTe:Cl позволили определить зависимость параметра электрон-фононного вза­и­мо­дей­ст­вия (фактор Хуанга — Рис) от времени облучения. PE "Politekhperiodika", Book and Journal Publishers 2014-08-29 Article Article Peer-reviewed Article application/pdf https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.4.45 10.15222/TKEA2014.2.45 Technology and design in electronic equipment; No. 4 (2014): Tekhnologiya i konstruirovanie v elektronnoi apparature; 45-49 Технологія та конструювання в електронній апаратурі; № 4 (2014): Технология и конструирование в электронной аппаратуре; 45-49 3083-6549 3083-6530 uk https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.4.45/278 Copyright (c) 2014 Budzulyak S. I., Korbutyak D. V., Lots'ko A. P., Vakhnyak N. D., Kalitchuk S. M., Demchina L. A., Konakova R. V., Shinkarenko V. V., Mel'nichuk A. V. http://creativecommons.org/licenses/by/4.0/
institution Technology and design in electronic equipment
baseUrl_str
datestamp_date 2025-05-30T19:33:46Z
collection OJS
language Ukrainian
topic теллурид кадмия
фотолюминесценция
микроволновое излучение
spellingShingle теллурид кадмия
фотолюминесценция
микроволновое излучение
Budzulyak, S. I.
Korbutyak, D. V.
Lots'ko, A. P.
Vakhnyak, N. D.
Kalitchuk, S. M.
Demchina, L. A.
Konakova, R. V.
Shinkarenko, V. V.
Mel'nichuk, A. V.
Особенности трансформации примесно-дефектных комплексов в CdTe:Cl под воздействием СВЧ-облучения
topic_facet cadmium telluride
photoluminescence
microwave radiation
теллурид кадмия
фотолюминесценция
микроволновое излучение
format Article
author Budzulyak, S. I.
Korbutyak, D. V.
Lots'ko, A. P.
Vakhnyak, N. D.
Kalitchuk, S. M.
Demchina, L. A.
Konakova, R. V.
Shinkarenko, V. V.
Mel'nichuk, A. V.
author_facet Budzulyak, S. I.
Korbutyak, D. V.
Lots'ko, A. P.
Vakhnyak, N. D.
Kalitchuk, S. M.
Demchina, L. A.
Konakova, R. V.
Shinkarenko, V. V.
Mel'nichuk, A. V.
author_sort Budzulyak, S. I.
title Особенности трансформации примесно-дефектных комплексов в CdTe:Cl под воздействием СВЧ-облучения
title_short Особенности трансформации примесно-дефектных комплексов в CdTe:Cl под воздействием СВЧ-облучения
title_full Особенности трансформации примесно-дефектных комплексов в CdTe:Cl под воздействием СВЧ-облучения
title_fullStr Особенности трансформации примесно-дефектных комплексов в CdTe:Cl под воздействием СВЧ-облучения
title_full_unstemmed Особенности трансформации примесно-дефектных комплексов в CdTe:Cl под воздействием СВЧ-облучения
title_sort особенности трансформации примесно-дефектных комплексов в cdte:cl под воздействием свч-облучения
title_alt Features of transformation of impurity-defect complexes in СdTe:Сl under the influence of microwave radiation
description High-resistance cadmium telluride single crystals are promising material for production of ionizing radiation detectors. To increase crystal resistance, they are doped with chlorine. The detector quality depends on uniformity of chlorine impurity distribution over the crystal.It is known that low-dose microwave irradiation can homogenize impurity distribution in a specimen. In the present work, we made an attempt to improve the detector material quality by using such post-technological treatment, as well as to study state variation for impurity-defect complexes. To this end, the effect of microwave irradiation on transformation of impurity-defect complexes in CdTe:Cl single crystals was investigated using low-temperature photoluminescence. It is shown that activation of ClTe donor centers by microwave irradiation for 10 s and presence of VCd acceptor centers in the specimens under investigation effectively facilitate formation of (VNd–ClTe) defect centers at which excitons are bound.Detailed investigations of the band form for donor-acceptor pairs (DAPs) in CdTe:Cl single crystals made it possible to determine the Huang — Rhys factor (that characterizes electron-phonon interaction in CdTe:Cl DAPs) as a function of microwave treatment duration. It is shown for single crystals with NCl = 5·1017 cm–3 and 5·1019 cm–3 that the Huang — Rhys factor grows with microwave irradiation dose. This is related to both homogenization of donor and acceptor centres distribution and increase of donor—acceptor spacing. It is shown that microwave irradiation of CdTe:Cl single crystals results in concentration reduction for separate cadmium vacancies VCd because of formation of (VNd–ClTe) defect centres at which excitons are bound.
publisher PE "Politekhperiodika", Book and Journal Publishers
publishDate 2014
url https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.4.45
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first_indexed 2025-09-24T17:30:43Z
last_indexed 2025-09-24T17:30:43Z
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