Использование щелевых резонаторов для проектирования усилителя мощности с ма­ни­пу­ля­цией гармоник

• Date: 2014
• Main Authors: Rassokhina, Yu. V., Krizhanovski, V. G., Kovalenko, V. A., Colantonio, P., Giofre, R.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2014
• Subjects: усилитель мощности; класс F; инверсный класс F (F–1); микрополосковая линия; щелевой резонатор
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.2-3.18
• Journal Title: Technology and design in electronic equipment

The authors proposed and experimentally verified the power amplifier circuit of inverse class F (F–1) based on GaN transistor NPTB00004, operating at 1,7 GHz. The novelty of this scheme is the application of a three-layer structure based on slot rectangular shaped resonators in the ground plane of t...