Физические свойства и зонная структура кристаллов (3HgTe)1–x(Al2Te3)x, легированных марганцем
This paper presents the results of the analysis of magnetic, optical, kinetic properties and band parameters of (3HgTe)1–x(Al2Te3)x crystals doped by manganese. The behaviour of the magnetic susceptibility of the (3HgTe)1–x(Al2Te3)x:<Mn> crystals can be explained by the presence of Mn–...
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2014
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oai:tkea.com.ua:article-3262025-05-30T19:34:08Z Physical properties and band structure of crystals (3HgTe)1–x(Al2Te3)x, doped with manganese Физические свойства и зонная структура кристаллов (3HgTe)1–x(Al2Te3)x, легированных марганцем Maryanchuk, P. D. Dymko, L. N. Romanishyn, T. R. Kovalyuk, T. T. Brus, V. V. Solovan, M. N. Mostovoy, A. I. crystal magnetic susceptibility cluster electric conductivity кристалл магнитная восприимчивость кластер электропроводность This paper presents the results of the analysis of magnetic, optical, kinetic properties and band parameters of (3HgTe)1–x(Al2Te3)x crystals doped by manganese. The behaviour of the magnetic susceptibility of the (3HgTe)1–x(Al2Te3)x:<Mn> crystals can be explained by the presence of Mn–Тe–Mn–Тe clusters or, more precisely, by their transition from a magnetically ordered to a paramagnetic state at Curie temperature Tc. The temperature dependences of electrical conductivity are typical for semiconductor materials. This is due to the increase in carrier concentration with the increase of temperature. The temperature dependence of the Hall coefficient indicates that electrons and holes participate in the transport phenomena in the studied samples (the conductivity is mixed). In (3HgTe)1–x(Al2Te3)x: crystals, the electron mobility decreases with increasing temperature, indicating the predominance of the scattering of the charge carriers on thermal vibrations of the crystal lattice. Thermoelectric power for the samples under investigation possesses negative values and increases in absolute value with the rise of temperature. The optical band gap of the samples was defined from the optical studies. We have measured current-voltage characteristics of n-TiO2/(3HgTe)1–x(Al2Te3)x:<Mn> and n-TiN/(3HgTe)1–x(Al2Te3)x:<Mn> heterojunctions at room temperature. The band gap, the matrix element of the interband interaction and the electron effective mass at the bottom of the conduction band were determined from the concentration dependence of the electrons effective mass at the Fermi level. В результате исследования магнитных, кинетических и оптических свойств кристаллов (3HgTe)1–x(Al2Te3)x: (x = 0,5) установлено, что в них имеют место прямые межзонные оптические переходы. Температурная зависимость электропроводности образцов имеет полупроводниковый характер, а температурная зависимость коэффициента Холла свидетельствует о смешанном типе проводимости. Особенности магнитных свойств обусловлены наличием в кристаллах кластеров типа Mn–Тe–Mn–Тe, в которых между атомами Mn через атомы халькогена осуществляется косвенное обменное взаимодействие антиферромагнитного характера. На основе проведенных исследований определены зонные параметры и построена схема зонной структуры кристаллов с концентрацией атомов марганца около 1020 см–3. PE "Politekhperiodika", Book and Journal Publishers 2014-06-23 Article Article Peer-reviewed Article application/pdf https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.2-3.54 10.15222/TKEA2014.2-3.54 Technology and design in electronic equipment; No. 2–3 (2014): Tekhnologiya i konstruirovanie v elektronnoi apparature; 54-60 Технологія та конструювання в електронній апаратурі; № 2–3 (2014): Технология и конструирование в электронной аппаратуре; 54-60 3083-6549 3083-6530 uk https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.2-3.54/290 Copyright (c) 2014 Maryanchuk P. D., Dymko L. N., Romanishyn T. R., Kovalyuk T. T., Brus V. V., Solovan M. N., Mostovoy A. I. http://creativecommons.org/licenses/by/4.0/ |
| institution |
Technology and design in electronic equipment |
| baseUrl_str |
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| datestamp_date |
2025-05-30T19:34:08Z |
| collection |
OJS |
| language |
Ukrainian |
| topic |
кристалл магнитная восприимчивость кластер электропроводность |
| spellingShingle |
кристалл магнитная восприимчивость кластер электропроводность Maryanchuk, P. D. Dymko, L. N. Romanishyn, T. R. Kovalyuk, T. T. Brus, V. V. Solovan, M. N. Mostovoy, A. I. Физические свойства и зонная структура кристаллов (3HgTe)1–x(Al2Te3)x, легированных марганцем |
| topic_facet |
crystal magnetic susceptibility cluster electric conductivity кристалл магнитная восприимчивость кластер электропроводность |
| format |
Article |
| author |
Maryanchuk, P. D. Dymko, L. N. Romanishyn, T. R. Kovalyuk, T. T. Brus, V. V. Solovan, M. N. Mostovoy, A. I. |
| author_facet |
Maryanchuk, P. D. Dymko, L. N. Romanishyn, T. R. Kovalyuk, T. T. Brus, V. V. Solovan, M. N. Mostovoy, A. I. |
| author_sort |
Maryanchuk, P. D. |
| title |
Физические свойства и зонная структура кристаллов (3HgTe)1–x(Al2Te3)x, легированных марганцем |
| title_short |
Физические свойства и зонная структура кристаллов (3HgTe)1–x(Al2Te3)x, легированных марганцем |
| title_full |
Физические свойства и зонная структура кристаллов (3HgTe)1–x(Al2Te3)x, легированных марганцем |
| title_fullStr |
Физические свойства и зонная структура кристаллов (3HgTe)1–x(Al2Te3)x, легированных марганцем |
| title_full_unstemmed |
Физические свойства и зонная структура кристаллов (3HgTe)1–x(Al2Te3)x, легированных марганцем |
| title_sort |
физические свойства и зонная структура кристаллов (3hgte)1–x(al2te3)x, легированных марганцем |
| title_alt |
Physical properties and band structure of crystals (3HgTe)1–x(Al2Te3)x, doped with manganese |
| description |
This paper presents the results of the analysis of magnetic, optical, kinetic properties and band parameters of (3HgTe)1–x(Al2Te3)x crystals doped by manganese. The behaviour of the magnetic susceptibility of the (3HgTe)1–x(Al2Te3)x:<Mn> crystals can be explained by the presence of Mn–Тe–Mn–Тe clusters or, more precisely, by their transition from a magnetically ordered to a paramagnetic state at Curie temperature Tc. The temperature dependences of electrical conductivity are typical for semiconductor materials. This is due to the increase in carrier concentration with the increase of temperature. The temperature dependence of the Hall coefficient indicates that electrons and holes participate in the transport phenomena in the studied samples (the conductivity is mixed). In (3HgTe)1–x(Al2Te3)x: crystals, the electron mobility decreases with increasing temperature, indicating the predominance of the scattering of the charge carriers on thermal vibrations of the crystal lattice. Thermoelectric power for the samples under investigation possesses negative values and increases in absolute value with the rise of temperature. The optical band gap of the samples was defined from the optical studies. We have measured current-voltage characteristics of n-TiO2/(3HgTe)1–x(Al2Te3)x:<Mn> and n-TiN/(3HgTe)1–x(Al2Te3)x:<Mn> heterojunctions at room temperature. The band gap, the matrix element of the interband interaction and the electron effective mass at the bottom of the conduction band were determined from the concentration dependence of the electrons effective mass at the Fermi level. |
| publisher |
PE "Politekhperiodika", Book and Journal Publishers |
| publishDate |
2014 |
| url |
https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.2-3.54 |
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2025-09-24T17:30:45Z |
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