Формирование резких границ раздела в эпитаксиальных структурах p+-AlGaAs/n-GaAs методом МОС-гидридной эпитаксии
The complexity of forming sharp and high-quality boundaries in p+AlGaAs/n-GaAs systems by MOCVD method is caused by differing on 80–120°С optimal crystallization temperature of GaAs layers and n-AlGaAs solid solutions. A method of forming qualitative hetero boundaries under conditions of co...
Saved in:
| Date: | 2014 |
|---|---|
| Main Authors: | , , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2014
|
| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.2-3.61 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Technology and design in electronic equipment |
Institution
Technology and design in electronic equipment| Summary: | The complexity of forming sharp and high-quality boundaries in p+AlGaAs/n-GaAs systems by MOCVD method is caused by differing on 80–120°С optimal crystallization temperature of GaAs layers and n-AlGaAs solid solutions. A method of forming qualitative hetero boundaries under conditions of continuous growth at changing crystallization temperature from 600–700°C has been developed. It has been determined that the crystallization of p+-AlGaAs: Zn solid solution layer on the surface of n-GaAs:Si layer, with increasing the crystallization temperature in the temperature range of 600–760°C at a rate 8–10 °C/min allows to crystallize sharp impurity boundary between the layers of p- and n-type conductivity. The method of forming sharp hetero boundaries in p-GaAs:Zn/n-GaAs:Si systems can be used for manufacturing wide range of epitaxial structures. |
|---|