Формирование резких границ раздела в эпитаксиальных структурах p+-AlGaAs/n-GaAs методом МОС-гидридной эпитаксии
The complexity of forming sharp and high-quality boundaries in p+AlGaAs/n-GaAs systems by MOCVD method is caused by differing on 80–120°С optimal crystallization temperature of GaAs layers and n-AlGaAs solid solutions. A method of forming qualitative hetero boundaries under conditions of co...
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| Datum: | 2014 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2014
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.2-3.61 |
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| Назва журналу: | Technology and design in electronic equipment |