Компенсация паразитных элементов транзистора с настройкой импедансов на гармониках в усилителе класса F
The authors present a new method of construction and calculation of the output load circuit (OLC) for class F power amplifiers (PA) with the addition of the third harmonic of the voltage. This method allows compensating the negative influences of parasitic elements of transistor (output capacitance...
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| Datum: | 2014 |
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PE "Politekhperiodika", Book and Journal Publishers
2014
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oai:tkea.com.ua:article-3282025-05-30T19:34:43Z Compensation of parasitic elements of transistor in the class F amplifier with the tuning of impedances at harmonics Компенсация паразитных элементов транзистора с настройкой импедансов на гармониках в усилителе класса F Yefymovych, A. P. Krizhanovski, V. G. class F power amplifier drain efficiency parasitic elements of transistor compensation output load circuit усилитель мощности класса F стоковый КПД паразитные элементы транзистора компенсация выходная нагрузочная цепь The authors present a new method of construction and calculation of the output load circuit (OLC) for class F power amplifiers (PA) with the addition of the third harmonic of the voltage. This method allows compensating the negative influences of parasitic elements of transistor (output capacitance — COUT, and inductance — LOUT) on the drain efficiency of the amplifier. The circuit of the parasitic elements was considered as a part of the proposed OLC. To calculate the OLC a system of three algebraic equations was compiled. The system is solved numerically relative to the three parameters of the OLC, for which the impedance on a chip of the transistor (on COUT) for odd and even harmonics corresponds to the theory of class F PAs. This method is applicable for the calculation of the OLC, which is realized in the frequency range of 300–500 MHz, where the use of elements with lumped parameters only is not always possible, while using elements with distributed parameters leads to a substantial increase in the size of the whole amplifier. In the developed OLC, the authors used elements with both lumped and distributed parameters, thus achieving a compromise between the geometric dimensions and physical realizability of the circuit elements. The proposed OLC, taking into account the parasitic elements of the transistor, allows setting impedances independently at the first and third harmonics while maintaining impedance at the second harmonic tending to zero. This makes it possible to optimize the drain efficiency at a given level of output power. The efficiency 72.5% was experimentally obtained at POUT = 1.045 W for the class F amplifier running at 400 MHz. The proposed methodology for constructing and calculating the OLC can be used to implement class F power amplifiers in the integrated-circuit form. Предложена методика построения и расчета выходной нагрузочной цепи для усилителя мощности класса F с добавлением третьей гармоники напряжения, которая позволяет скомпенсировать негативное влияние паразитных элементов транзистора на стоковый КПД усилителя. Такая цепь позволяет оптимизировать стоковый КПД усилителя с помощью независимой настройки импедансов на первой и третьей гармониках. Представлены результаты моделирования и экспериментального исследования энергетических характеристик такого усилителя на арсенид-галлиевом полевом транзисторе CLY15, рассчитанного на рабочую частоту 400 МГц. PE "Politekhperiodika", Book and Journal Publishers 2014-02-25 Article Article Peer-reviewed Article application/pdf https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.1.03 10.15222/TKEA2014.1.03 Technology and design in electronic equipment; No. 1 (2014): Tekhnologiya i konstruirovanie v elektronnoi apparature; 3-13 Технологія та конструювання в електронній апаратурі; № 1 (2014): Технология и конструирование в электронной аппаратуре; 3-13 3083-6549 3083-6530 uk https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.1.03/292 Copyright (c) 2014 Yefymovych A. P., Krizhanovski V. G. http://creativecommons.org/licenses/by/4.0/ |
| institution |
Technology and design in electronic equipment |
| baseUrl_str |
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| datestamp_date |
2025-05-30T19:34:43Z |
| collection |
OJS |
| language |
Ukrainian |
| topic |
усилитель мощности класса F стоковый КПД паразитные элементы транзистора компенсация выходная нагрузочная цепь |
| spellingShingle |
усилитель мощности класса F стоковый КПД паразитные элементы транзистора компенсация выходная нагрузочная цепь Yefymovych, A. P. Krizhanovski, V. G. Компенсация паразитных элементов транзистора с настройкой импедансов на гармониках в усилителе класса F |
| topic_facet |
class F power amplifier drain efficiency parasitic elements of transistor compensation output load circuit усилитель мощности класса F стоковый КПД паразитные элементы транзистора компенсация выходная нагрузочная цепь |
| format |
Article |
| author |
Yefymovych, A. P. Krizhanovski, V. G. |
| author_facet |
Yefymovych, A. P. Krizhanovski, V. G. |
| author_sort |
Yefymovych, A. P. |
| title |
Компенсация паразитных элементов транзистора с настройкой импедансов на гармониках в усилителе класса F |
| title_short |
Компенсация паразитных элементов транзистора с настройкой импедансов на гармониках в усилителе класса F |
| title_full |
Компенсация паразитных элементов транзистора с настройкой импедансов на гармониках в усилителе класса F |
| title_fullStr |
Компенсация паразитных элементов транзистора с настройкой импедансов на гармониках в усилителе класса F |
| title_full_unstemmed |
Компенсация паразитных элементов транзистора с настройкой импедансов на гармониках в усилителе класса F |
| title_sort |
компенсация паразитных элементов транзистора с настройкой импедансов на гармониках в усилителе класса f |
| title_alt |
Compensation of parasitic elements of transistor in the class F amplifier with the tuning of impedances at harmonics |
| description |
The authors present a new method of construction and calculation of the output load circuit (OLC) for class F power amplifiers (PA) with the addition of the third harmonic of the voltage. This method allows compensating the negative influences of parasitic elements of transistor (output capacitance — COUT, and inductance — LOUT) on the drain efficiency of the amplifier. The circuit of the parasitic elements was considered as a part of the proposed OLC. To calculate the OLC a system of three algebraic equations was compiled. The system is solved numerically relative to the three parameters of the OLC, for which the impedance on a chip of the transistor (on COUT) for odd and even harmonics corresponds to the theory of class F PAs. This method is applicable for the calculation of the OLC, which is realized in the frequency range of 300–500 MHz, where the use of elements with lumped parameters only is not always possible, while using elements with distributed parameters leads to a substantial increase in the size of the whole amplifier. In the developed OLC, the authors used elements with both lumped and distributed parameters, thus achieving a compromise between the geometric dimensions and physical realizability of the circuit elements. The proposed OLC, taking into account the parasitic elements of the transistor, allows setting impedances independently at the first and third harmonics while maintaining impedance at the second harmonic tending to zero. This makes it possible to optimize the drain efficiency at a given level of output power. The efficiency 72.5% was experimentally obtained at POUT = 1.045 W for the class F amplifier running at 400 MHz. The proposed methodology for constructing and calculating the OLC can be used to implement class F power amplifiers in the integrated-circuit form. |
| publisher |
PE "Politekhperiodika", Book and Journal Publishers |
| publishDate |
2014 |
| url |
https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.1.03 |
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2025-09-24T17:30:45Z |
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