Исследование метрологических характеристик системы измерения малых изменений температуры

Metrological parameters of the non-standard contact device were investigated to characterize its performance in temperature change measurements in the specified temperature range. Several series thermistors with a negative temperature coefficient of resistance connected into a linearization circuit...

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Datum:2014
Hauptverfasser: Samynina, M. G., Shigimaga, V. A.
Format: Artikel
Sprache:Ukrainian
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2014
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment
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spelling oai:tkea.com.ua:article-3352025-05-30T19:34:43Z Investigation of metrological parameters of measuring system for small temperature changes Исследование метрологических характеристик системы измерения малых изменений температуры Samynina, M. G. Shigimaga, V. A. temperature change measuring semiconductor thermoresistors resolution metrological parameters измерение изменения температуры полупроводниковые терморезисторы разрешающая способность метрологические параметры Metrological parameters of the non-standard contact device were investigated to characterize its performance in temperature change measurements in the specified temperature range. Several series thermistors with a negative temperature coefficient of resistance connected into a linearization circuit were used as the sensing element of the semiconductor device. Increasing the number of thermistors leads to improved circuitry resolving power and reduced dispersion of this parameter. However, there is the question of optimal ratio of the number of thermistors and implemented temperature resolution, due to the nonlinear resolution dependence of the number of series-connected thermoelements. An example of the scheme of four similar thermistors as the primary sensor and of a standard measuring instrument, which is working in ohmmeter mode, shows the ability to measure temperature changes at the level of hundredth of a Celsius degree. In this case, a quantization error, which is determined by a resolution of the measuring system, and the ohmmeter accuracy make the main contribution to the overall accuracy of measuring small temperature changes. Предложено нестандартное устройство на основе полупроводниковых терморезисторов с отрицательным температурным коэффициентом сопротивления для контактного измерения изменений температуры в установленном диапазоне. Показано влияние количества по­с­ле­до­ва­те­ль­но включенных термоэлементов на параметры измерительной системы, исследованы ее метрологические характеристики. PE "Politekhperiodika", Book and Journal Publishers 2014-02-25 Article Article Peer-reviewed Article application/pdf https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.1.52 10.15222/TKEA2014.1.52 Technology and design in electronic equipment; No. 1 (2014): Tekhnologiya i konstruirovanie v elektronnoi apparature; 52-56 Технологія та конструювання в електронній апаратурі; № 1 (2014): Технология и конструирование в электронной аппаратуре; 52-56 3083-6549 3083-6530 uk https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.1.52/299 Copyright (c) 2014 Samynina M. G., Shigimaga V. A. http://creativecommons.org/licenses/by/4.0/
institution Technology and design in electronic equipment
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datestamp_date 2025-05-30T19:34:43Z
collection OJS
language Ukrainian
topic измерение изменения температуры
полупроводниковые терморезисторы
разрешающая способность
метрологические параметры
spellingShingle измерение изменения температуры
полупроводниковые терморезисторы
разрешающая способность
метрологические параметры
Samynina, M. G.
Shigimaga, V. A.
Исследование метрологических характеристик системы измерения малых изменений температуры
topic_facet temperature change measuring
semiconductor thermoresistors
resolution
metrological parameters
измерение изменения температуры
полупроводниковые терморезисторы
разрешающая способность
метрологические параметры
format Article
author Samynina, M. G.
Shigimaga, V. A.
author_facet Samynina, M. G.
Shigimaga, V. A.
author_sort Samynina, M. G.
title Исследование метрологических характеристик системы измерения малых изменений температуры
title_short Исследование метрологических характеристик системы измерения малых изменений температуры
title_full Исследование метрологических характеристик системы измерения малых изменений температуры
title_fullStr Исследование метрологических характеристик системы измерения малых изменений температуры
title_full_unstemmed Исследование метрологических характеристик системы измерения малых изменений температуры
title_sort исследование метрологических характеристик системы измерения малых изменений температуры
title_alt Investigation of metrological parameters of measuring system for small temperature changes
description Metrological parameters of the non-standard contact device were investigated to characterize its performance in temperature change measurements in the specified temperature range. Several series thermistors with a negative temperature coefficient of resistance connected into a linearization circuit were used as the sensing element of the semiconductor device. Increasing the number of thermistors leads to improved circuitry resolving power and reduced dispersion of this parameter. However, there is the question of optimal ratio of the number of thermistors and implemented temperature resolution, due to the nonlinear resolution dependence of the number of series-connected thermoelements. An example of the scheme of four similar thermistors as the primary sensor and of a standard measuring instrument, which is working in ohmmeter mode, shows the ability to measure temperature changes at the level of hundredth of a Celsius degree. In this case, a quantization error, which is determined by a resolution of the measuring system, and the ohmmeter accuracy make the main contribution to the overall accuracy of measuring small temperature changes.
publisher PE "Politekhperiodika", Book and Journal Publishers
publishDate 2014
url https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.1.52
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