Получение двухсторонних высоковольтных эпитаксиальных кремниевых p–i–n-структур методом ЖФЭ
Silicon p–i–n-structures are usually obtained using conventional diffusion method or liquid phase epitaxy (LPE). In both cases, the formation of p- and n-layers occurs in two stages. This technological approach is quite complex. Moreover, when forming bilateral high-voltage epitaxial layers, their p...
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| Дата: | 2013 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Ukrainian |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2013
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| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.6.41 |
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| Назва журналу: | Technology and design in electronic equipment |
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oai:tkea.com.ua:article-3442025-05-30T19:35:01Z Obtaining of bilateral high voltage epitaxial p–i–n Si structures by LPE method Получение двухсторонних высоковольтных эпитаксиальных кремниевых p–i–n-структур методом ЖФЭ Vakiv, N. M. Krukovsky, S. I. Tymchyshyn, V. R. Vas'kiv, A. P. epitaxial layer liquid-phase epitaxy rare-earth element dopping эпитаксиальный слой жидкофазная эпитаксия редкоземельный элемент легирование Silicon p–i–n-structures are usually obtained using conventional diffusion method or liquid phase epitaxy (LPE). In both cases, the formation of p- and n-layers occurs in two stages. This technological approach is quite complex. Moreover, when forming bilateral high-voltage epitaxial layers, their parameters significantly deteriorate as a result of prolonged heat treatment of active high-resistivity layer. Besides, when using diffusion method, it is impossible to provide good reproducibility of the process. In this paper, a technique of growing bilateral high-voltage silicon p–i–n-structures by LPE in a single process is proposed. The authors have obtained the optimum compounds of silicon-undersaturated molten solutions for highly doped (5.1018 cm–3) contact layers: 0.4–0.8 at. % aluminium in gallium melt for growing p-Si-layers and 0.03–0.15 at. % ytterbium in tin melt for n-Si-layers. Parameters of such structures provide for manufacturing of high-voltage diodes on their basis. Such diodes can be used in navigational equipment, communication systems for household and special purposes, on-board power supply systems, radar systems, medical equipment, etc. Разработана технология выращивания двухсторонних высоковольтных кремниевых p–i–n-структур методом жидкофазной эпитаксии в едином технологическом процессе. Электрофизические параметры полученных структур позволяют изготавливать на их основе высоковольтные диоды. PE "Politekhperiodika", Book and Journal Publishers 2013-12-19 Article Article Peer-reviewed Article application/pdf https://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.6.41 10.15222/TKEA2013.6.41 Technology and design in electronic equipment; No. 6 (2013): Tekhnologiya i konstruirovanie v elektronnoi apparature; 41-45 Технологія та конструювання в електронній апаратурі; № 6 (2013): Технология и конструирование в электронной аппаратуре; 41-45 3083-6549 3083-6530 uk https://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.6.41/307 Copyright (c) 2013 Vakiv N. M., Krukovsky S. I., Tymchyshyn V. R., Vas’kiv A. P. http://creativecommons.org/licenses/by/4.0/ |
| institution |
Technology and design in electronic equipment |
| baseUrl_str |
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| datestamp_date |
2025-05-30T19:35:01Z |
| collection |
OJS |
| language |
Ukrainian |
| topic |
эпитаксиальный слой жидкофазная эпитаксия редкоземельный элемент легирование |
| spellingShingle |
эпитаксиальный слой жидкофазная эпитаксия редкоземельный элемент легирование Vakiv, N. M. Krukovsky, S. I. Tymchyshyn, V. R. Vas'kiv, A. P. Получение двухсторонних высоковольтных эпитаксиальных кремниевых p–i–n-структур методом ЖФЭ |
| topic_facet |
epitaxial layer liquid-phase epitaxy rare-earth element dopping эпитаксиальный слой жидкофазная эпитаксия редкоземельный элемент легирование |
| format |
Article |
| author |
Vakiv, N. M. Krukovsky, S. I. Tymchyshyn, V. R. Vas'kiv, A. P. |
| author_facet |
Vakiv, N. M. Krukovsky, S. I. Tymchyshyn, V. R. Vas'kiv, A. P. |
| author_sort |
Vakiv, N. M. |
| title |
Получение двухсторонних высоковольтных эпитаксиальных кремниевых p–i–n-структур методом ЖФЭ |
| title_short |
Получение двухсторонних высоковольтных эпитаксиальных кремниевых p–i–n-структур методом ЖФЭ |
| title_full |
Получение двухсторонних высоковольтных эпитаксиальных кремниевых p–i–n-структур методом ЖФЭ |
| title_fullStr |
Получение двухсторонних высоковольтных эпитаксиальных кремниевых p–i–n-структур методом ЖФЭ |
| title_full_unstemmed |
Получение двухсторонних высоковольтных эпитаксиальных кремниевых p–i–n-структур методом ЖФЭ |
| title_sort |
получение двухсторонних высоковольтных эпитаксиальных кремниевых p–i–n-структур методом жфэ |
| title_alt |
Obtaining of bilateral high voltage epitaxial p–i–n Si structures by LPE method |
| description |
Silicon p–i–n-structures are usually obtained using conventional diffusion method or liquid phase epitaxy (LPE). In both cases, the formation of p- and n-layers occurs in two stages. This technological approach is quite complex. Moreover, when forming bilateral high-voltage epitaxial layers, their parameters significantly deteriorate as a result of prolonged heat treatment of active high-resistivity layer. Besides, when using diffusion method, it is impossible to provide good reproducibility of the process. In this paper, a technique of growing bilateral high-voltage silicon p–i–n-structures by LPE in a single process is proposed. The authors have obtained the optimum compounds of silicon-undersaturated molten solutions for highly doped (5.1018 cm–3) contact layers: 0.4–0.8 at. % aluminium in gallium melt for growing p-Si-layers and 0.03–0.15 at. % ytterbium in tin melt for n-Si-layers. Parameters of such structures provide for manufacturing of high-voltage diodes on their basis. Such diodes can be used in navigational equipment, communication systems for household and special purposes, on-board power supply systems, radar systems, medical equipment, etc. |
| publisher |
PE "Politekhperiodika", Book and Journal Publishers |
| publishDate |
2013 |
| url |
https://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.6.41 |
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