Изучение адсорбционных состояний в керамике ZnO–Ag методом ТВЭ-кривых

Изучение адсорбционных состояний в керамике ZnO–Ag методом ТВЭ-кривых

The ZnO–Ag ceramic system as the material for semiconductor sensors of ethanol vapors was proposed quite a long time ago. The main goal of this work was to study surface electron states of this system and their relation with the electric properties of the material. The quantity of doping with Ag2O w...

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Date:2013
Main Author: Lyashkov, A. Yu.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2013
Subjects:
керамика
оксид цинка
Ag
вакуум
адсорбция
десорбция
электропроводность
уровень Ферми
зонная диаграмма
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.6.46
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
id oai:tkea.com.ua:article-345
record_format ojs
spelling oai:tkea.com.ua:article-3452025-05-30T19:35:01Z Study of adsorption states in ZnO–Ag gas-sensitive ceramics using the ECTV curves method Изучение адсорбционных состояний в керамике ZnO–Ag методом ТВЭ-кривых Lyashkov, A. Yu. ceramics zinc oxide Ag vacuum semiconductor desorption conductivity Fermi level band diagram керамика оксид цинка Ag вакуум адсорбция десорбция электропроводность уровень Ферми зонная диаграмма The ZnO–Ag ceramic system as the material for semiconductor sensors of ethanol vapors was proposed quite a long time ago. The main goal of this work was to study surface electron states of this system and their relation with the electric properties of the material. The quantity of doping with Ag2O was changed in the range of 0.1–2.0% of mass. The increase of the Ag doping leads to a shift of the Fermi level down (closer to the valence zone). The paper presents research results on electrical properties of ZnO–Ag ceramics using the method of thermal vacuum curves of electrical conductivity. Changes in the electrical properties during heating in vacuum in the temperature range of 300–800 K were obtained and discussed. The increase of Tvac leads to removal of oxygen from the surface of samples The oxygen is adsorbed in the form of O2– and O– ions and is the acceptor for ZnO. This results in the lowering of the inter-crystallite potential barriers in the ceramic. The surface electron states (SES) above the Fermi level are virtually uncharged. The increase of the conductivity causes desorption of oxygen from the SES settled below the Fermi level of the semiconductor. The model allows evaluating the depth of the Fermi level in the inhomogeneous semiconductor materials. Приведены результаты экспериментальных исследований поверхностных электронных со­сто­я­ний, обусловленных адсорбцией газов на поверхности газочувствительной керамики ZnO—Ag, методом термовакуумных кривых электропроводности. Исследования проводились в ин­тер­ва­ле температур 300–800 К. Предложена модель, позволяющая оценить глубину за­ле­га­ния уро­в­ня Ферми в неоднородных полупроводниковых материалах. PE "Politekhperiodika", Book and Journal Publishers 2013-12-19 Article Article Peer-reviewed Article application/pdf https://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.6.46 10.15222/TKEA2013.6.46 Technology and design in electronic equipment; No. 6 (2013): Tekhnologiya i konstruirovanie v elektronnoi apparature; 46-51 Технологія та конструювання в електронній апаратурі; № 6 (2013): Технология и конструирование в электронной аппаратуре; 46-51 3083-6549 3083-6530 uk https://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.6.46/308 Copyright (c) 2013 Lyashkov A. Yu. http://creativecommons.org/licenses/by/4.0/
institution Technology and design in electronic equipment
baseUrl_str
datestamp_date 2025-05-30T19:35:01Z
collection OJS
language Ukrainian
topic керамика
оксид цинка
Ag
вакуум
адсорбция
десорбция
электропроводность
уровень Ферми
зонная диаграмма
spellingShingle керамика
оксид цинка
Ag
вакуум
адсорбция
десорбция
электропроводность
уровень Ферми
зонная диаграмма
Lyashkov, A. Yu.
Изучение адсорбционных состояний в керамике ZnO–Ag методом ТВЭ-кривых
topic_facet ceramics
zinc oxide
Ag
vacuum
semiconductor
desorption
conductivity
Fermi level
band diagram
керамика
оксид цинка
Ag
вакуум
адсорбция
десорбция
электропроводность
уровень Ферми
зонная диаграмма
format Article
author Lyashkov, A. Yu.
author_facet Lyashkov, A. Yu.
author_sort Lyashkov, A. Yu.
title Изучение адсорбционных состояний в керамике ZnO–Ag методом ТВЭ-кривых
title_short Изучение адсорбционных состояний в керамике ZnO–Ag методом ТВЭ-кривых
title_full Изучение адсорбционных состояний в керамике ZnO–Ag методом ТВЭ-кривых
title_fullStr Изучение адсорбционных состояний в керамике ZnO–Ag методом ТВЭ-кривых
title_full_unstemmed Изучение адсорбционных состояний в керамике ZnO–Ag методом ТВЭ-кривых
title_sort изучение адсорбционных состояний в керамике zno–ag методом твэ-кривых
title_alt Study of adsorption states in ZnO–Ag gas-sensitive ceramics using the ECTV curves method
description The ZnO–Ag ceramic system as the material for semiconductor sensors of ethanol vapors was proposed quite a long time ago. The main goal of this work was to study surface electron states of this system and their relation with the electric properties of the material. The quantity of doping with Ag2O was changed in the range of 0.1–2.0% of mass. The increase of the Ag doping leads to a shift of the Fermi level down (closer to the valence zone). The paper presents research results on electrical properties of ZnO–Ag ceramics using the method of thermal vacuum curves of electrical conductivity. Changes in the electrical properties during heating in vacuum in the temperature range of 300–800 K were obtained and discussed. The increase of Tvac leads to removal of oxygen from the surface of samples The oxygen is adsorbed in the form of O2– and O– ions and is the acceptor for ZnO. This results in the lowering of the inter-crystallite potential barriers in the ceramic. The surface electron states (SES) above the Fermi level are virtually uncharged. The increase of the conductivity causes desorption of oxygen from the SES settled below the Fermi level of the semiconductor. The model allows evaluating the depth of the Fermi level in the inhomogeneous semiconductor materials.
publisher PE "Politekhperiodika", Book and Journal Publishers
publishDate 2013
url https://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.6.46
work_keys_str_mv AT lyashkovayu studyofadsorptionstatesinznoaggassensitiveceramicsusingtheectvcurvesmethod
AT lyashkovayu izučenieadsorbcionnyhsostoânijvkeramikeznoagmetodomtvékrivyh
first_indexed 2025-09-24T17:30:47Z
last_indexed 2025-09-24T17:30:47Z
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