Двухфункциональный датчик давления-температуры на основе нитевидных кристаллов кремния

The article presents the design of a pressure-temperature sensor based on p-type silicon whiskers, doped with boron, with a resistivity of 0,005 Ohm?cm. The sensor is operable in a temperature range from –100 to +200°C and at pressures from 0 to 20 MPa. The sensor is designed for a wide range of app...

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Datum:2013
Hauptverfasser: Druzhinin, A. A., Kutrakov, A. P., Liakh-Kaguy, N. S., Vuitsyk, A. M.
Format: Artikel
Sprache:Ukrainian
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2013
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Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.4.23
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment