Малошумящие усилители на основе SiGe-HBT для сверхширокополосных систем

Малошумящие усилители на основе SiGe-HBT для сверхширокополосных систем

This paper presents the principles of design of integrated circuits low-noise amplifiers (LNA) based on silicon-germanium heterojunction bipolar transistors (SiGe HBT) for ultra-wideband (UWB) systems. UWB systems range 0,5–10,6 GHz are used in communications, radars of medical applications and safe...

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Datum:2013
Hauptverfasser: Popov, V. P., Sidorenko, V. P.
Format: Artikel
Sprache:Ukrainian
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2013
Schlagworte:
сверхширокополосные (СШП) системы
СШП-радары медицинского назначения
малошумящие усилители
кремний-германиевый гетеропереходный биполярный транзистор (SiGe-HBT)
резистивные обратные связи
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.1.13
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Zusammenfassung:This paper presents the principles of design of integrated circuits low-noise amplifiers (LNA) based on silicon-germanium heterojunction bipolar transistors (SiGe HBT) for ultra-wideband (UWB) systems. UWB systems range 0,5–10,6 GHz are used in communications, radars of medical applications and safety systems. The proposed UWB LNA implemented by inductorless or minimum number of inductors schemes. In this paper researched and designed two variants of UWB LNA 0,5–11 GHz frequency range.

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