Малошумящие усилители на основе SiGe-HBT для сверхширокополосных систем
This paper presents the principles of design of integrated circuits low-noise amplifiers (LNA) based on silicon-germanium heterojunction bipolar transistors (SiGe HBT) for ultra-wideband (UWB) systems. UWB systems range 0,5–10,6 GHz are used in communications, radars of medical applications and safe...
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| Datum: | 2013 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2013
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.1.13 |
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| Назва журналу: | Technology and design in electronic equipment |