Технология изготовления контактов к карбиду кремния
The authors classified the results of investigations of resistivity of ohmic contacts to silicon carbide made without any semiconductor surface modification. A set of contacts with better parameters were analysed. From the results of this analysis, some recommendations were made concerning optimal c...
Збережено в:
| Дата: | 2013 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | Ukrainian |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2013
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.1.25 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | The authors classified the results of investigations of resistivity of ohmic contacts to silicon carbide made without any semiconductor surface modification. A set of contacts with better parameters were analysed. From the results of this analysis, some recommendations were made concerning optimal contact-forming layers for p- and n-SiC types of 4H, 6H, 3C, 15R, 21R polytypes. |
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