Технология изготовления контактов к карбиду кремния

The authors classified the results of investigations of resistivity of ohmic contacts to silicon carbide made without any semiconductor surface modification. A set of contacts with better parameters were analysed. From the results of this analysis, some recommendations were made concerning optimal c...

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Datum:2013
Hauptverfasser: Kudryk, Ya. Ya., Bigun, R. I., Kudryk, R. Ya.
Format: Artikel
Sprache:Ukrainian
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2013
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Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.1.25
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment