Электрические свойства анизотипных гетеропереходов n-ТiО2:Mn/p-CdTe
The authors have investigated electronic properties of n-TiO2:Mn/p-CdTe anisotype heterojunctions, produced by the method of electron-beam evaporation of TiO2:Mn film on single-crystal CdTe substrates in vacuum. The dominant mechanism of charge transport in the forward and reverse bias has been esta...
Збережено в:
| Дата: | 2013 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Ukrainian |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2013
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.1.45 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | The authors have investigated electronic properties of n-TiO2:Mn/p-CdTe anisotype heterojunctions, produced by the method of electron-beam evaporation of TiO2:Mn film on single-crystal CdTe substrates in vacuum. The dominant mechanism of charge transport in the forward and reverse bias has been established. |
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